Current sensor, system and method

• US 10,317,439 B2
• Filed: 03/25/2016
• Issued: 06/11/2019
• Est. Priority Date: 04/01/2015
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Ausserlechner, Udo
• Primary Examiner(s): Le, Son T
• Application Number:
  US15/080,747
• Publication Number:
  US 20160291059A1
• Time in Patent Office: 1,173 Days
• CPC Class Codes: G01R 1/203 Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts resistors in general H01C; microwave or radiowave terminations H01P1/26; coupling devices H01R
• CPC Class Codes: G01R 19/32 Compensating for temperature change
• CPC Class Codes: G01R 27/14 Measuring resistance by measuring current or voltage obtained from a reference source G01R27/16, G01R27/20, G01R27/22 take precedence
• CPC Class Codes: G01R 27/16 Measuring impedance of element or network through which a current is passing from another source, e.g. cable, power line

Abstract

Current sensors, systems and methods are provided. A test current is injected via a pair of force terminals into a conductor and a pair of sense terminals are configured to provide an input signal that corresponds to a voltage drop across the conductor. Based on the test current in the conductor and based on the input signal, a contribution to the voltage drop due to the test current and a contribution to the voltage drop due to a primary current through the conductor may be determined. In addition, at least one of a reference resistance of the conductor and the primary current in the conductor may be further determined.

Claims

1. A system, comprising:

a conductor;

a lock-in-amplifier (LIA) configured to generate a test current

a first force contact coupled to the conductor at a first position;

a second force contact coupled to the conductor at a second position, the first position and the second position being arranged at a first distance with respect to each other;

a pair of force terminals coupled to the first force contact and the second force contact, the pair of force terminals configured to inject the test current from the LIA into the conductor across the first distance;

a first sense contact coupled to the conductor at a third position;

a second sense contact coupled to the conductor at a fourth position, the third position and the fourth position being arranged at a second distance with respect to each another and located within the first distance;

a device, comprising;

a microelectronic package;

a memory configured to store a predefined reference resistance associated with the conductor;

a pair of sense terminals coupled to the first sense contact and the second sense contact configured to provide an input signal related to a voltage drop across the conductor between the first sense contact and the second sense contact, wherein the pair of sense terminals is at least partly accessible from outside the microelectronic package; and

at least one processor configured to determine a primary current through the conductor based on the input signal and the predefined reference resistance; and

a first wiring coupling a first one of the pair of sense terminals with the first sense contact, wherein the first wiring includes a first connector to the LIA; and

a second wiring coupling a second one of the pair of sense terminals with the second sense contact, wherein the second wiring comprises a second connector to the LIA, and

wherein the LIA is configured to receive the input signal from the pair of sense terminals via the first wiring and the second wiring.

2. The system of claim 1, further comprising:

a third wiring coupling a first one of the pair of force terminals with the first force contact; and

a fourth wiring coupling a second one of the pair of force terminals with the second force contact.

3. The system of claim 1, further comprising a substrate having a first conductive layer and a second conductive layer, the second conductive layer contiguously forming the conductor between the first position and the second position.

4. The system of claim 3, wherein the microelectronic package is attached to an outer surface of the substrate adjacent to the second conductive layer, and the substrate further comprises a thermal coupling between the second conductive layer forming the conductor and the outer surface.

5. The system of claim 1, wherein the LIA is configured to determine the voltage drop between the pair of sense terminals from the input signal.

6. The system of claim 5, wherein the LIA is configured to determine a ratio of the voltage drop over a magnitude of the test current, and write the determined ratio into the memory as the predefined reference resistance.

7. The system of claim 1, wherein the LIA is configured to receive the input signal from the pair of sense terminals, and determine a contribution to the voltage drop due to the test current via a lock-in technique, determine a ratio of the contribution over a magnitude of the test current, and write the determined ratio into the memory as the predefined reference resistance.

8. A device, comprising:

a microelectronic package;

a pair of sense terminals coupled to a first sense contact at a first position on a conductor and a second sense contact at a second position on the conductor, the pair of sense terminals configured to provide an input signal related to a voltage drop across the conductor in a first distance between the first sense contact and the second sense contact, wherein the pair of sense terminals is at least partly accessible from outside the microelectronic package;

at least one processor configured to determine a contribution to the voltage drop due to a test current in the conductor based on the test current and the input signal, wherein the test current is injected into the conductor across a second distance between a first force contact at a third position on the conductor and a second force contact at a fourth position on the conductor via a pair of force terminals coupled to a lock-in-amplifier (LIA), and wherein the first distance is located within the second distance;

a first wiring coupling a first one of the pair of sense terminals with the first sense contact, wherein the first wiring includes a first connector to the LIA;

a second wiring coupling a second one of the pair of sense terminals with the second sense contact, wherein the second wiring comprises a second connector to the LIA, and

wherein the LIA is configured to receive the input signal from the pair of sense terminals via the first wiring and the second wiring,

the at least on processor further configured to determine a contribution to the voltage drop due to a primary current through the conductor; and

the at least on processor further configured to determine the primary current.

9. The device of claim 8, further comprising:

a temperature sensor configured to measure a temperature signal indicative of a temperature,

wherein the at least one processor is configured to determine the primary current based on the temperature signal.

10. The device of claim 9, wherein the temperature sensor is arranged in the microelectronic package such that a sensitive region of the temperature sensor is thermally coupled with an exterior of the microelectronic package.

11. The device of claim 8, further comprising:

a control interface configured to receive a control signal indicating a current transient of the primary current,

wherein the pair of sense terminals is configured to selectively provide the input signal depending on the received control signal.

12. The device of claim 11, further comprising a protection circuit configured to suppress a transient of the input signal based on the received control signal and includes at least one of a series-connected capacitor, a galvanically isolated inductive coupling, a series-connected resistor, and a clamping diode.

13. The device of claim 8, wherein the LIA is configured to determine the voltage drop between the pair of sense terminals from the input signal.

14. The device of claim 13, wherein the LIA is configured to determine a ratio of the voltage drop over a magnitude of the test current, and write the determined ratio into the memory as the predefined reference resistance.

15. The device of claim 8, wherein the LIA is configured to receive the input signal from the pair of sense terminals, and determine a contribution to the voltage drop due to the test current via a lock-in technique, determine a ratio of the contribution over a magnitude of the test current, and write the determined ratio into the memory as the predefined reference resistance.

16. A method, comprising:

injecting, via a pair of force terminals, a test current from a lock-in-amplifier (LIA) into a conductor across a first distance between a first force contact and a second force contact;

receiving, by at least one processor via a pair of sense terminals, an input signal related to a first voltage drop in the conductor across a second distance between a first sense contact and a second sense contact, wherein the second distance is located within the first distance, wherein the pair of sense terminals are coupled to the first sense contact and the second sense contact;

receiving, by the LIA via the pair of sense terminals, the input signal further related to a second voltage drop in the conductor across the second distance between the first sense contact and the second sense contact, wherein a first wiring couples a first one of the pair of sense terminals with the first sense contact and the first wiring includes a first connector to the LIA, a second wiring couples a second one of the pair of sense terminals with the second sense contact and the second wiring comprises a second connector to the LIA, and the LIA is configured to receive the input signal from the pair of sense terminals via the first wiring and the second wiring,

determining, via the LIA, based on the test current and the input signal, a contribution to the second voltage drop due to the test current;

determining, via the at least one processor, a contribution to the voltage drop due to a primary current;

determining, via the LIA, information corresponding to a reference resistance of the conductor based on the input signal, wherein the information is a ratio of the second voltage drop over a magnitude of the test current; and

determining, via the at least one processor, the reference resistance of the conductor based on the information from the LIA, and the primary current based on the contribution to the voltage drop due to the primary current and the reference resistance.

17. The method of claim 16,

wherein determining the reference resistance of the conductor and the primary current is executed at a plurality of temperatures, and

wherein the determined reference resistance includes a temperature coefficient of resistivity.

18. The method of claim 16, further comprising:

writing, to a memory, the reference resistance of the conductor.

19. The method of claim 16,

wherein the test current is injected into the conductor having a spectral distribution, and

wherein said determining of the contribution to the voltage drop due to the test current is based on at least one of a lock-in technique and a spread-spectrum technique sensitive to the spectral distribution of the test current.

20. The method of claim 19, wherein the spectral distribution resides in a frequency band of 0 Hz-1 MHz.

21. The method of claim 16, wherein the test current is selectively injected into the conductor in intermitted time intervals.

22. The method of claim 16, wherein the test current comprises an alternating current.

23. A system, comprising:

a conductor;

a first force contact coupled to the conductor at a first position;

a second force contact coupled to the conductor at a second position, the first position and the second position being arranged at a first distance with respect to each other;

a pair of force terminals coupled to the first force contact and the second force contact, the pair of force terminals configured to inject a test current into the conductor across the first distance;

a first sense contact coupled to the conductor at a third position;

a second sense contact coupled to the conductor at a fourth position, the third position and the fourth position being arranged at a second distance with respect to each another and located within the first distance;

a device, comprising;

a microelectronic package;

a memory configured to store a predefined reference resistance associated with the conductor;

a pair of sense terminals coupled to the first sense contact and the second sense contact configured to provide an input signal related to a voltage drop across the conductor between the first sense contact and the second sense contact, wherein the pair of sense terminals is at least partly accessible from outside the microelectronic package; and

at least one processor configured to determine a primary current through the conductor based on the input signal and the predefined reference resistance; and

a substrate having a first conductive layer and a second conductive layer, the second conductive layer contiguously forming the conductor between the first position and the second position,

wherein the first conductive layer has a first thickness and the second conductive layer has a second thickness, wherein the first thickness is less than the second thickness, and

wherein the first conductive layer comprises trace wiring coupling a first one of the pair of sense terminals with the first sense contact, trace wiring coupling a second one of the pair of sense terminals with the second sense contact, trace wiring coupling a first one of the pair of force terminals with the first force contact, and trace wiring coupling a second one of the pair of force terminals with the second force contact.