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Thermal silicon etch

  • US 10,319,600 B1
  • Filed: 03/12/2018
  • Issued: 06/11/2019
  • Est. Priority Date: 03/12/2018
  • Status: Active Grant
First Claim
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1. An etching method comprising:

  • flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber, wherein a substrate is positioned within the substrate processing region and the substrate comprises silicon and dielectric, wherein the silicon and the dielectric are exposed on sidewalls of a trench formed in stacked alternating layers of the silicon and the dielectric; and

    removing silicon from the sidewalls of the trench.

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