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Selective SiN lateral recess

  • US 10,319,603 B2
  • Filed: 10/24/2017
  • Issued: 06/11/2019
  • Est. Priority Date: 10/07/2016
  • Status: Expired due to Fees
First Claim
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1. An etching method comprising:

  • flowing a fluorine-containing precursor and an oxygen-containing precursor into a processing region of the semiconductor processing chamber, wherein a substrate is positioned within the processing region, and wherein the substrate comprises a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide; and

    laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide, wherein the layers of silicon nitride are laterally etched less than 10 nm from the sidewalls of the trench, and wherein a temperature within the processing region is maintained below about −

    20°

    C.

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