Semiconductor device, display system, and electronic device
First Claim
1. A semiconductor device comprising:
- a pixel portion comprising a pixel comprising a first transistor;
a driver circuit comprising a second transistor;
a signal generation circuit comprising a third transistor and a fourth transistor; and
a level shifter comprising a fifth transistor,wherein the level shifter is configured to amplify a signal input from the signal generation circuit and output an amplified signal to the driver circuit,wherein a channel region of the first transistor, a channel region of the second transistor, and a channel region of the third transistor are formed in a semiconductor substrate,wherein each of a channel region of the fourth transistor and a channel region of the fifth transistor is formed in a semiconductor film, andwherein the semiconductor film comprises a metal oxide.
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Accused Products
Abstract
A novel semiconductor device or display device is provided. A semiconductor substrate is used as a substrate of a display portion and a transistor in the display portion is formed using the semiconductor substrate. In this way, variation in the characteristics of the transistors among pixels is reduced and pixel density can be increased. Moreover, transistors used for a driver circuit, a signal generation circuit, and a level shifter are formed using the semiconductor substrate. As a result, these circuits can be formed directly on the substrate of the display portion, whereby bonding of a chip and the substrate is unnecessary. Furthermore, these circuits can be easily connected to each other, so that signal delay or an increase in power consumption due to complicated wirings can be prevented.
15 Citations
8 Claims
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1. A semiconductor device comprising:
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a pixel portion comprising a pixel comprising a first transistor; a driver circuit comprising a second transistor; a signal generation circuit comprising a third transistor and a fourth transistor; and a level shifter comprising a fifth transistor, wherein the level shifter is configured to amplify a signal input from the signal generation circuit and output an amplified signal to the driver circuit, wherein a channel region of the first transistor, a channel region of the second transistor, and a channel region of the third transistor are formed in a semiconductor substrate, wherein each of a channel region of the fourth transistor and a channel region of the fifth transistor is formed in a semiconductor film, and wherein the semiconductor film comprises a metal oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification