Semiconductor device having a varying thickness nanowire channel and method for fabricating the same
First Claim
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1. A transistor, comprising:
- a drain;
a source;
a gate electrode;
a first nanowire between the source and drain; and
a gate spacer formed on opposite sidewalls of the gate electrode, whereinthe gate spacer includes a hole therein,the first nanowire extends through the hole in the gate spacer to contact the source and drain,the first nanowire has a first section with a first thickness and a second section with a second thickness different from the first thickness, wherein the second section is between the first section and at least one of the source or drain, the first nanowire to include a channel when a voltage is applied to the gate electrode,the gate electrode surrounds a periphery of the first section, andthe gate spacer surrounds a periphery of the second section.
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Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
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Citations
17 Claims
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1. A transistor, comprising:
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a drain; a source; a gate electrode; a first nanowire between the source and drain; and a gate spacer formed on opposite sidewalls of the gate electrode, wherein the gate spacer includes a hole therein, the first nanowire extends through the hole in the gate spacer to contact the source and drain, the first nanowire has a first section with a first thickness and a second section with a second thickness different from the first thickness, wherein the second section is between the first section and at least one of the source or drain, the first nanowire to include a channel when a voltage is applied to the gate electrode, the gate electrode surrounds a periphery of the first section, and the gate spacer surrounds a periphery of the second section. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification