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Semiconductor device having a varying thickness nanowire channel and method for fabricating the same

  • US 10,319,863 B2
  • Filed: 12/08/2016
  • Issued: 06/11/2019
  • Est. Priority Date: 05/30/2016
  • Status: Active Grant
First Claim
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1. A transistor, comprising:

  • a drain;

    a source;

    a gate electrode;

    a first nanowire between the source and drain; and

    a gate spacer formed on opposite sidewalls of the gate electrode, whereinthe gate spacer includes a hole therein,the first nanowire extends through the hole in the gate spacer to contact the source and drain,the first nanowire has a first section with a first thickness and a second section with a second thickness different from the first thickness, wherein the second section is between the first section and at least one of the source or drain, the first nanowire to include a channel when a voltage is applied to the gate electrode,the gate electrode surrounds a periphery of the first section, andthe gate spacer surrounds a periphery of the second section.

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