Device including transparent layer with profiled surface for improved extraction

• US 10,319,881 B2
• Filed: 12/26/2016
• Issued: 06/11/2019
• Est. Priority Date: 06/15/2011
• Status: Active Grant

• Current Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Inventors: Shatalov, Maxim S., Dobrinsky, Alexander, Shur, Michael, Gaska, Remigijus
• Primary Examiner(s): Alam, Mohammed R
• Application Number:
  US15/390,575
• Publication Number:
  US 20170104131A1
• Time in Patent Office: 897 Days
• CPC Class Codes: G06F 30/20 Design optimisation, verification or simulation optimisation, verification or simulation of circuit designs G06F30/30
• CPC Class Codes: G06F 30/30 Circuit design
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y10T 29/49 Method of mechanical manufacture

Abstract

A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Claims

1. A device comprising:

a group III nitride heterostructure; and

an at least partially transparent substrate having a first side and a second side, wherein the group III nitride heterostructure is located on the second side, and wherein radiation passes through the second side, and wherein the second side comprises a profiled surface, the profiled surface including;

a plurality of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation, wherein the plurality of large roughness components comprise a series of truncated shapes formed of a material of the at least partially transparent substrate, wherein at least one of the series of truncated shapes is inversely truncated with respect to a direction the radiation travels through the at least partially transparent substrate; and

a plurality of small roughness components providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation, wherein the plurality of small roughness components are superimposed on the plurality of large roughness components, wherein a graded refractive index along a height of each small roughness component in the plurality of small roughness components decreases substantially linearly along the height.

2. The device of claim 1, wherein a size of each of the plurality of large roughness components varies laterally across the profiled surface.

3. The device of claim 2, wherein the variation in size between each of the large roughness components in the plurality of large roughness components is radially monotonic.

4. The device of claim 1, wherein a height of each of the plurality of large roughness components varies laterally across the profiled surface.

5. The device of claim 1, wherein a third side of the at least partially transparent substrate includes the profiled surface.

6. The device of claim 1, wherein the profiled surface further comprises a set of layers deposited in a region between each of the plurality of large roughness components.

7. The device of claim 6, wherein the set of layers are formed of a material that is partially transparent to the target wavelength and has an index of refraction that is different than an index of refraction of a material of the at least partially transparent substrate.

8. The device of claim 1, wherein the target wavelength of the radiation is between 250 nanometers and 350 nanometers.

9. A method comprising:

designing a profiled surface for an at least partially transparent substrate of a device, wherein the at least partially transparent substrate includes a first side and a second side, wherein a group Ill nitride heterostructure is located on the second side, and wherein radiation passes through the second side during operation of the device, wherein the profiled surface includes;

a plurality of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation, wherein the plurality of large roughness components comprise a series of truncated shapes formed of a material of the at least partially transparent substrate, wherein at least one of the series of truncated shapes is inversely truncated with respect to a direction the radiation travels through the at least partially transparent substrate; and

a plurality of small roughness components providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation, wherein the plurality of small roughness components are superimposed on the plurality of large roughness components, wherein a graded refractive index along a height of each small roughness component in the plurality of small roughness components decreases substantially linearly along the height.

10. The method of claim 9, further comprising fabricating the device including the at least partially transparent substrate, wherein the fabricating includes fabricating the profiled surface.

11. The method of claim 10, wherein the fabricating the profiled surface includes forming at least one of:

the set of large roughness components or the set of small roughness components using at least one of;

selective deposition or selective etching of nanodots.

12. The method of claim 10, wherein the fabricating the profiled surface includes forming at least one of:

the set of large roughness components or the set of small roughness components using at least one of;

selective deposition or selective etching of nanorods.

13. The method of claim 10, wherein fabricating the profiled surface includes performing a simulation using ray tracing and a genetic algorithm.

14. An emitting device comprising:

an active region configured to generate radiation having a peak wavelength; and

an at least partially transparent substrate having a first side and a second side, wherein the active region is located on the first side, wherein radiation generated in the active region passes through the second side, and wherein the at least partially transparent substrate includes a profiled surface, wherein the profiled surface includes;

a plurality of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation, wherein the plurality of large roughness components comprise a series of truncated shapes formed of a material of the at least partially transparent substrate, wherein at least one of the series of truncated shapes is inversely truncated with respect to a direction the radiation travels through the at least partially transparent substrate; and

a plurality of small roughness components providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation, wherein the plurality of small roughness components are superimposed on the plurality of large roughness components, wherein a graded refractive index along a height of each small roughness component in the plurality of small roughness components decreases substantially linearly along the height.

15. The device of claim 14, wherein a size of each of the plurality of large roughness components varies laterally across the profiled surface.

16. The device of claim 15, wherein the variation in size between each of the large roughness components in the plurality of large roughness components is radially monotonic.

17. The device of claim 14, wherein a height of each of the plurality of large roughness components varies laterally across the profiled surface.

18. The device of claim 14, wherein a third side of the at least partially transparent substrate includes the profiled surface.

19. The device of claim 14, wherein the profiled surface further comprises a set of layers deposited in a region between each of the plurality of large roughness components.

20. The device of claim 14, wherein the target wavelength of the radiation is between 250 nanometers and 350 nanometers.