Temperature compensation circuits

• US 10,325,655 B2
• Filed: 04/10/2015
• Issued: 06/18/2019
• Est. Priority Date: 04/10/2015
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: Ge, Ning, Yang, Jianhua, Hu, Miao, Strachan, John Paul
• Primary Examiner(s): Cho, Sung Il
• Application Number:
  US15/556,361
• Publication Number:
  US 20180108403A1
• Time in Patent Office: 1,530 Days
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0033 Disturbance prevention or evaluation; Refreshing of disturbed memory data
• CPC Class Codes: G11C 13/0038 Power supply circuits
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects

Abstract

A temperature compensation circuit may comprise a temperature sensor to sense a temperature signal of a memristor crossbar array, a signal converter to convert the temperature signal to an electrical control signal, and a voltage compensation circuit to determine a compensation voltage based on the electrical control signal and pre-calibrated temperature data of the memristor crossbar array.

Claims

1. A temperature compensation circuit, comprising:

a temperature sensor to sense a temperature signal of a memristor crossbar array;

a signal converter to convert the temperature signal to an electrical control signal; and

a voltage compensation circuit to determine a compensation voltage based on the electrical control signal and pre-calibrated temperature data of the memristor crossbar array, wherein the compensation voltage is determined by comparing a temperature of the memristor crossbar array with the pre-calibrated temperature data of the memristor crossbar array, wherein the pre-calibrated temperature data of the memristor crossbar array comprises a temperature-dependent resistance of the memristors.

2. The temperature compensation circuit of claim 1, further comprising a voltage source to apply the compensation voltage to the memristor crossbar array.

3. The temperature compensation circuit of claim 1, wherein the compensation voltage is to compensate for a difference in resistance of the memristors as a result of the temperature of the memristor crossbar array.

4. The temperature compensation circuit of claim 1, wherein the memristor crossbar array comprises:

a plurality of row lines;

a plurality of column lines;

a plurality of memristors coupled between a unique combination of one row line and one column line.

5. The temperature compensation circuit of claim 4, wherein each of the memristors exhibits linear current-voltage behavior.

6. The temperature compensation circuit of claim 4, wherein the signal converter is an analog-to-digital converter.

7. The temperature compensation circuit of claim 1, wherein the temperature sensor comprises any of a diode sensor, a temperature coefficient sensor, a band gap circuit sensor, and a memristor-based sensor.

8. A memory circuit, comprising:

a memory crossbar array comprising a plurality of row lines, a plurality of column lines, and a plurality of memory elements, wherein each memory element is coupled between a unique combination of one row line and one column line; and

a temperature compensation circuit, comprising;

a temperature sensor to sense a temperature signal of the memory crossbar array;

a signal converter to convert the temperature to an electrical control signal;

a voltage compensation circuit to determine a compensation voltage based on the electrical control signal and on a temperature-dependent resistance of the memory elements, wherein the compensation voltage is to compensate for a difference in resistance of the memory cells as a result of the temperature of the memory crossbar array, wherein the compensation voltage is determined by comparing the temperature of the memory crossbar array with a pre-calibrated temperature data of the memory crossbar array, wherein the pre-calibrated temperature data of the memory crossbar array comprises the temperature-dependent resistance of the memory elements; and

a voltage source to apply the compensation voltage to the memory crossbar array.

9. The memory circuit of claim 8, wherein each of the memory elements exhibits linear current-voltage behavior.

10. The memory circuit of claim 8, further comprising a storage for storing the temperature-dependent resistance data of the memory elements.

11. The memory circuit of claim 8, wherein each of the memory elements comprises a memristor.

12. A method, comprising:

sensing a temperature of a memory crossbar array, wherein the memory crossbar array comprises a plurality of memory elements;

receiving a temperature-dependent resistance of the memory elements;

determining a compensation voltage based on the temperature of the memory crossbar array and on the temperature-dependent resistance of the memory elements, wherein the compensation voltage is determined by comparing the temperature of the memory crossbar array with a pre-calibrated temperature data of the memory crossbar array, wherein the pre-calibrated temperature data of the memory crossbar array comprises the temperature-dependent resistance of the memory elements; and

applying a compensated voltage, wherein the compensated voltage comprises the compensation voltage and an input voltage.

13. The method of claim 12, wherein applying the compensation voltage is to compensate for a difference in resistance of the memory elements as a result of the temperature of the memory crossbar array.

14. The method of claim 12, wherein the memory crossbar array comprises a plurality of row lines and a plurality of column lines, and wherein each memory element comprises a memristor coupled between a unique combination of one row line and one column line.