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Vehicle, display device and manufacturing method for a semiconductor device

  • US 10,325,940 B2
  • Filed: 11/10/2016
  • Issued: 06/18/2019
  • Est. Priority Date: 11/30/2001
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:

  • forming a separation layer over a substrate;

    forming a peeled layer comprising the transistor over the separation layer; and

    irradiating the separation layer with a laser light to separate the peeled layer from the substrate,wherein the peeled layer is capable of curving in a first direction,wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, andwherein the first direction is perpendicular to the second direction.

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