Vehicle, display device and manufacturing method for a semiconductor device

• US 10,325,940 B2
• Filed: 11/10/2016
• Issued: 06/18/2019
• Est. Priority Date: 11/30/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Maruyama, Junya, Goto, Yuugo, Kuwabara, Hideaki, Yamazaki, Shunpei
• Primary Examiner(s): Booth, Richard A
• Application Number:
  US15/347,967
• Publication Number:
  US 20170125454A1
• Time in Patent Office: 950 Days
• CPC Class Codes: B60R 11/0229 for displays, e.g. cathodic tubes
• CPC Class Codes: B60R 11/04 Mounting of cameras operative during drive; Arrangement of controls thereof relative to the vehicle
• CPC Class Codes: B60R 2011/004 outside the vehicle
• CPC Class Codes: B60R 2300/202 displaying a blind spot scene on the vehicle part responsible for the blind spot
• CPC Class Codes: B60R 2300/802 for monitoring and displaying vehicle exterior blind spot views
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68386 Separation by peeling
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Claims

1. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:

forming a separation layer over a substrate;

forming a peeled layer comprising the transistor over the separation layer; and

irradiating the separation layer with a laser light to separate the peeled layer from the substrate,

wherein the peeled layer is capable of curving in a first direction,

wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, and

wherein the first direction is perpendicular to the second direction.

2. The method according to claim 1, wherein the separation layer is formed of an amorphous silicon or a polysilicon.

3. The method according to claim 1, wherein the separation layer is formed by a sputtering method or a plasma CVD method so as to put a large amount of hydrogen into the separation layer.

4. The method according to claim 1, wherein the substrate is a glass substrate or a quartz substrate.

5. The method according to claim 1, wherein elements included in the peeled layer are formed at 410°

C. or below.

6. The method according to claim 1, wherein a shape of the laser light is linear or rectangular.

7. The method according to claim 1, wherein the laser light is irradiated to a back surface of the separation layer through the substrate.

8. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:

forming a separation layer over a substrate;

forming a peeled layer comprising the transistor over the separation layer;

irradiating the separation layer with a laser light to separate the peeled layer from the substrate; and

transferring the peeled layer to an object,

wherein the peeled layer is capable of curving in a first direction,

wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, and

wherein the first direction is perpendicular to the second direction.

9. The method according to claim 8, wherein the separation layer is formed of an amorphous silicon or a polysilicon.

10. The method according to claim 8, wherein the separation layer is formed by a sputtering method or a plasma CVD method so as to put a large amount of hydrogen into the separation layer.

11. The method according to claim 8, wherein the substrate is a glass substrate or a quartz substrate.

12. The method according to claim 8, wherein elements included in the peeled layer are formed at 410°

C. or below.

13. The method according to claim 8, wherein a shape of the laser light is linear or rectangular.

14. The method according to claim 8, wherein the laser light is irradiated to a back surface of the separation layer through the substrate.

15. The method according to claim 8, wherein the object has a curved surface.