Vehicle, display device and manufacturing method for a semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:
- forming a separation layer over a substrate;
forming a peeled layer comprising the transistor over the separation layer; and
irradiating the separation layer with a laser light to separate the peeled layer from the substrate,wherein the peeled layer is capable of curving in a first direction,wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, andwherein the first direction is perpendicular to the second direction.
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Abstract
To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
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Citations
15 Claims
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1. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:
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forming a separation layer over a substrate; forming a peeled layer comprising the transistor over the separation layer; and irradiating the separation layer with a laser light to separate the peeled layer from the substrate, wherein the peeled layer is capable of curving in a first direction, wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, and wherein the first direction is perpendicular to the second direction. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:
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forming a separation layer over a substrate; forming a peeled layer comprising the transistor over the separation layer; irradiating the separation layer with a laser light to separate the peeled layer from the substrate; and transferring the peeled layer to an object, wherein the peeled layer is capable of curving in a first direction, wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, and wherein the first direction is perpendicular to the second direction. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification