Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
First Claim
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1. A semiconductor power device, comprising:
- a current-controlling structure at a first surface of a semiconductor mass;
a semiconductive drift region extending down into said semiconductor mass;
said current-controlling structure and said drift region being jointly connected in series between a first source/drain region at said first surface, and a second source/drain region at a second surface of said semiconductor mass; and
trenches extending down through said drift region into said semiconductor mass, at least some ones of said trenches being at least partially filled with a trench-filling material which is not an insulator, and which is electrically connected to said second source/drain region;
said trenches and said current-controlling structure having completely independent lateral alignment;
wherein permanent electrostatic charge is present at sidewalls of said trenches.
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Abstract
Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
32 Citations
20 Claims
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1. A semiconductor power device, comprising:
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a current-controlling structure at a first surface of a semiconductor mass; a semiconductive drift region extending down into said semiconductor mass; said current-controlling structure and said drift region being jointly connected in series between a first source/drain region at said first surface, and a second source/drain region at a second surface of said semiconductor mass; and trenches extending down through said drift region into said semiconductor mass, at least some ones of said trenches being at least partially filled with a trench-filling material which is not an insulator, and which is electrically connected to said second source/drain region; said trenches and said current-controlling structure having completely independent lateral alignment; wherein permanent electrostatic charge is present at sidewalls of said trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor power device, comprising:
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a current-controlling structure at a first surface of a semiconductor mass; a semiconductive drift region extending down into said semiconductor mass; said current-controlling structure and said drift region being jointly connected in series between a first source/drain region at said first surface, and a second source/drain region at a second surface of said semiconductor mass; and trenches extending down through said drift region into said semiconductor mass, at least some ones of said trenches being at least partially filled with a trench-filling material which is not an insulator, and which is electrically connected to said second source/drain region; said trenches and said current-controlling structure having completely independent lateral alignment; wherein said trenches are lined with a dielectric layer which includes immobile ions.
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15. A semiconductor power device, comprising:
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an array of active device cells, including both an upper array of current-controlling structures, and a lower array of permanently charged trenches within a semiconducting drift region;
said trenches individually containing permanent electrostatic charge at or near sidewalls thereof; anda transitional structure surrounding said array, said transitional structure including at least some trenches which are fabricated in the same steps as said trenches in said array, but which have smaller maximum width, and a different ratio of charge density between upper and lower portions of the walls of said trenches. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification