Vertical transistor device structure with cylindrically-shaped field plates
First Claim
1. A vertical power transistor device comprising:
- a semiconductor layer of a first conductivity type;
a plurality of dielectric regions disposed in the semiconductor layer, each dielectric region having an outer side that extends in a vertical direction from a top surface of the semiconductor layer downward, each dielectric region having a rounded-square cross-section in a horizontal plane perpendicular to the vertical direction, adjacent ones of the dielectric regions being laterally separated by a narrow region of the semiconductor layer;
a cylindrical field plate member centrally disposed within each dielectric region, the cylindrical field plate member having a circular cross-section in the horizontal plane and comprising a conductive material that fully extends laterally across a diameter of the circular cross-section of the cylindrical field plate member, the conductive material, extending in the vertical direction from the top surface downward to near a bottom of the dielectric region, the dielectric region laterally separating the cylindrical field plate member from the narrow region;
a source region of the first conductivity type disposed at the top surface of the narrow region;
a body region of a second conductivity type, the body region separating the source from a lower portion of the narrow region, the lower portion comprising a drift region;
a drain region of the first conductivity type disposed beneath the semiconductor layer; and
an annular gate member disposed in each dielectric region between the narrow region and the cylindrical field plate member.
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Accused Products
Abstract
A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of dielectric regions disposed in the semiconductor layer. The dielectric regions extend in a vertical direction from a top surface of the semiconductor layer downward. Each dielectric region has a rounded-square cross-section in a horizontal plane perpendicular to the vertical direction. Adjacent ones of the dielectric regions are laterally separated by a narrow region of the semiconductor layer. Each dielectric region has a cylindrical field plate member centrally disposed therein. The cylindrical field plate member extends in the vertical direction from the top surface downward to near a bottom of the dielectric region. The dielectric region laterally separates the cylindrical field plate member from the narrow region. A source region is disposed at the top surface, and a drain region is disposed at the bottom, of the semiconductor layer.
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Citations
20 Claims
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1. A vertical power transistor device comprising:
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a semiconductor layer of a first conductivity type; a plurality of dielectric regions disposed in the semiconductor layer, each dielectric region having an outer side that extends in a vertical direction from a top surface of the semiconductor layer downward, each dielectric region having a rounded-square cross-section in a horizontal plane perpendicular to the vertical direction, adjacent ones of the dielectric regions being laterally separated by a narrow region of the semiconductor layer; a cylindrical field plate member centrally disposed within each dielectric region, the cylindrical field plate member having a circular cross-section in the horizontal plane and comprising a conductive material that fully extends laterally across a diameter of the circular cross-section of the cylindrical field plate member, the conductive material, extending in the vertical direction from the top surface downward to near a bottom of the dielectric region, the dielectric region laterally separating the cylindrical field plate member from the narrow region; a source region of the first conductivity type disposed at the top surface of the narrow region; a body region of a second conductivity type, the body region separating the source from a lower portion of the narrow region, the lower portion comprising a drift region; a drain region of the first conductivity type disposed beneath the semiconductor layer; and an annular gate member disposed in each dielectric region between the narrow region and the cylindrical field plate member. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A high-voltage transistor comprising:
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a substrate; an array of dielectric regions disposed in the substrate and arranged in an array, each of the dielectric regions having an outer side that extends in a vertical direction from a top surface of the substrate downward, the dielectric regions having a rounded-square shaped cross-section in a horizontal plane perpendicular to the vertical direction, adjacent ones of the dielectric regions being laterally separated by a narrow region of the substrate; a cylindrical field plate member centrally disposed within each dielectric region, the cylindrical field plate member having a circular cross-section in the horizontal plane and comprising a conductive material that fully extends laterally across a diameter of the circular cross-section of the cylindrical field plate member, the conductive material extending in the vertical direction from the top surface downward to near a bottom of the dielectric region, the dielectric region laterally separating the cylindrical field plate member from the narrow region; a source disposed at the top surface of the narrow region; a body region that separates the source from a lower portion of the narrow region, the lower portion comprising a drift region; a drain disposed at the bottom of the substrate; and an annular gate member disposed in each dielectric region between the narrow region and the cylindrical field plate member. - View Dependent Claims (17, 18, 19, 20)
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Specification