Semiconductor device and method of manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a substrate comprising a trench;
a gate insulating film disposed in the trench;
a gate electrode disposed in the trench and disposed on the gate insulating film, the gate electrode contacting the gate insulating film,wherein the gate electrode comprises a gate conductor and a metal atom that is diffused into the gate conductor, the gate conductor being chemically bonded with the metal atom,the gate conductor is one among titanium, titanium nitride, and titanium oxynitride,the metal atom is one among lanthanum, strontium, lithium, and manganese, andan effective work function of the gate electrode is less than an effective work function of the gate conductor; and
a metal disposed on the gate electrode and filling the trench, the metal being different than the gate conductor and the metal atom diffused into the gate conductor.
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Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a substrate comprising a trench; a gate insulating film disposed in the trench; a gate electrode disposed in the trench and disposed on the gate insulating film, the gate electrode contacting the gate insulating film, wherein the gate electrode comprises a gate conductor and a metal atom that is diffused into the gate conductor, the gate conductor being chemically bonded with the metal atom, the gate conductor is one among titanium, titanium nitride, and titanium oxynitride, the metal atom is one among lanthanum, strontium, lithium, and manganese, and an effective work function of the gate electrode is less than an effective work function of the gate conductor; and a metal disposed on the gate electrode and filling the trench, the metal being different than the gate conductor and the metal atom diffused into the gate conductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 17)
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9. A method of manufacturing a semiconductor device, the method comprising:
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providing a substrate comprising a trench; forming a gate insulating film in the trench; forming a metal oxide film on the gate insulating film, the metal oxide film comprising a metal atom that is one among lanthanum, strontium, lithium, and manganese; forming a gate conductive layer directly on the metal oxide film; and heating the metal oxide film to diffuse the metal atom of the metal oxide film into the gate conductive layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a substrate comprising a trench; a gate insulating film disposed in the trench; a gate electrode disposed in the trench and disposed on the gate insulating film, the gate electrode contacting the gate insulating film, the gate electrode consisting of a gate conductor and a metal atom that is diffused into the gate conductor, the gate conductor being one among titanium, titanium nitride, and titanium oxynitride, the metal atom being one among lanthanum, strontium, lithium, and manganese, and a work function of the metal atom being less than a work function of the gate conductor; and a metal disposed in the trench and disposed on the gate electrode, the metal being different than the gate conductor and the metal atom diffused into the gate conductor.
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Specification