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Semiconductor device and method for manufacturing the same

  • US 10,326,008 B2
  • Filed: 03/06/2018
  • Issued: 06/18/2019
  • Est. Priority Date: 03/05/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductive film;

    an oxide semiconductor film over the first conductive film, the oxide semiconductor film comprising a first region, a second region and a third region;

    a gate insulating film over the oxide semiconductor film;

    a gate electrode over the gate insulating film;

    a second conductive film over the third region; and

    a third conductive film over the second conductive film, the third conductive film electrically connected to the oxide semiconductor film,wherein the gate electrode overlaps with the second region,wherein the second region comprises a channel formation region,wherein a conductivity of the first region is higher than a conductivity of the second region,wherein a conductivity of the third region is higher than the conductivity of the second region,wherein the first region is electrically connected to the first conductive film,wherein the third conductive film is a pixel electrode, andwherein the third conductive film and the second conductive film function as electrodes of a capacitor over the third region.

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