Semiconductor device and method for manufacturing the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a first conductive film;
an oxide semiconductor film over the first conductive film, the oxide semiconductor film comprising a first region, a second region and a third region;
a gate insulating film over the oxide semiconductor film;
a gate electrode over the gate insulating film;
a second conductive film over the third region; and
a third conductive film over the second conductive film, the third conductive film electrically connected to the oxide semiconductor film,wherein the gate electrode overlaps with the second region,wherein the second region comprises a channel formation region,wherein a conductivity of the first region is higher than a conductivity of the second region,wherein a conductivity of the third region is higher than the conductivity of the second region,wherein the first region is electrically connected to the first conductive film,wherein the third conductive film is a pixel electrode, andwherein the third conductive film and the second conductive film function as electrodes of a capacitor over the third region.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.
183 Citations
18 Claims
-
1. A semiconductor device comprising:
-
a first conductive film; an oxide semiconductor film over the first conductive film, the oxide semiconductor film comprising a first region, a second region and a third region; a gate insulating film over the oxide semiconductor film; a gate electrode over the gate insulating film; a second conductive film over the third region; and a third conductive film over the second conductive film, the third conductive film electrically connected to the oxide semiconductor film, wherein the gate electrode overlaps with the second region, wherein the second region comprises a channel formation region, wherein a conductivity of the first region is higher than a conductivity of the second region, wherein a conductivity of the third region is higher than the conductivity of the second region, wherein the first region is electrically connected to the first conductive film, wherein the third conductive film is a pixel electrode, and wherein the third conductive film and the second conductive film function as electrodes of a capacitor over the third region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device comprising:
-
a pixel, wherein the pixel comprises; a signal line; a power supply line; a first conductive film; an oxide semiconductor film over the first conductive film, the oxide semiconductor film comprising a first region, a second region and a third region; a gate insulating film over the oxide semiconductor film; a gate electrode over the gate insulating film; a second conductive film over the third region; and a third conductive film over the second conductive film, the third conductive film electrically connected to the oxide semiconductor film, wherein one of the first region and the third region is electrically connected to the power supply line, wherein the gate electrode is electrically connected to the signal line, wherein the gate electrode overlaps with the second region, wherein the second region comprises a channel formation region, wherein a conductivity of the first region is higher than a conductivity of the second region, wherein a conductivity of the third region is higher than the conductivity of the second region, wherein the first region is electrically connected to the first conductive film, wherein the third conductive film has a region in which the third conductive film functions as a pixel electrode, and wherein the third conductive film and the second conductive film function as electrodes of a capacitor over the third region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
-
Specification