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Light emitting diode and manufacture method thereof

  • US 10,326,047 B2
  • Filed: 09/02/2016
  • Issued: 06/18/2019
  • Est. Priority Date: 09/02/2015
  • Status: Expired due to Fees
First Claim
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1. A light-emitting diode (LED), comprising:

  • a semiconductor epitaxial layer comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer, wherein the quantum well layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer, a recessed portion is formed in the semiconductor epitaxial layer, the recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and exposes the first-type doped semiconductor layer, and defines a first region and a second region on the semiconductor epitaxial layer, wherein the first region and the second region respectively contain a portion of the second-type doped semiconductor layer, a portion of the quantum well layer, and a portion of the first-type doped semiconductor layer and are connected to each other via the first-type doped semiconductor layer;

    a first electrode located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer, wherein the first electrode further comprises a soldering portion and a branch portion extended from the soldering portion, the soldering portion is disposed on a portion of the second-type doped semiconductor layer, and the branch portion is disposed on a portion of the first-type doped semiconductor layer; and

    a second electrode located in the second region and electrically connected to the second-type doped semiconductor layer,wherein the branch portion of the first electrode covers a portion of an upper surface of the second-type doped semiconductor layer, a side surface of the second-type doped semiconductor layer, a side surface of the quantum well layer, and an upper surface of a portion of the first-type doped semiconductor layer.

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