Light emitting diode and manufacture method thereof
First Claim
1. A light-emitting diode (LED), comprising:
- a semiconductor epitaxial layer comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer, wherein the quantum well layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer, a recessed portion is formed in the semiconductor epitaxial layer, the recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and exposes the first-type doped semiconductor layer, and defines a first region and a second region on the semiconductor epitaxial layer, wherein the first region and the second region respectively contain a portion of the second-type doped semiconductor layer, a portion of the quantum well layer, and a portion of the first-type doped semiconductor layer and are connected to each other via the first-type doped semiconductor layer;
a first electrode located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer, wherein the first electrode further comprises a soldering portion and a branch portion extended from the soldering portion, the soldering portion is disposed on a portion of the second-type doped semiconductor layer, and the branch portion is disposed on a portion of the first-type doped semiconductor layer; and
a second electrode located in the second region and electrically connected to the second-type doped semiconductor layer,wherein the branch portion of the first electrode covers a portion of an upper surface of the second-type doped semiconductor layer, a side surface of the second-type doped semiconductor layer, a side surface of the quantum well layer, and an upper surface of a portion of the first-type doped semiconductor layer.
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Accused Products
Abstract
A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.
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Citations
40 Claims
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1. A light-emitting diode (LED), comprising:
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a semiconductor epitaxial layer comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer, wherein the quantum well layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer, a recessed portion is formed in the semiconductor epitaxial layer, the recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and exposes the first-type doped semiconductor layer, and defines a first region and a second region on the semiconductor epitaxial layer, wherein the first region and the second region respectively contain a portion of the second-type doped semiconductor layer, a portion of the quantum well layer, and a portion of the first-type doped semiconductor layer and are connected to each other via the first-type doped semiconductor layer; a first electrode located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer, wherein the first electrode further comprises a soldering portion and a branch portion extended from the soldering portion, the soldering portion is disposed on a portion of the second-type doped semiconductor layer, and the branch portion is disposed on a portion of the first-type doped semiconductor layer; and a second electrode located in the second region and electrically connected to the second-type doped semiconductor layer, wherein the branch portion of the first electrode covers a portion of an upper surface of the second-type doped semiconductor layer, a side surface of the second-type doped semiconductor layer, a side surface of the quantum well layer, and an upper surface of a portion of the first-type doped semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light-emitting diode (LED), comprising:
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a semiconductor epitaxial layer comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer, wherein the quantum well layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer, a recessed portion is formed in the semiconductor epitaxial layer, the recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and exposes the first-type doped semiconductor layer, and defines a first region and a second region on the semiconductor epitaxial layer, wherein the first region and the second region respectively contain a portion of the second-type doped semiconductor layer, a portion of the quantum well layer, and a portion of the first-type doped semiconductor layer and are connected to each other via the first-type doped semiconductor layer; a first electrode located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer; a second electrode located in the second region and electrically connected to the second-type doped semiconductor layer; a current-blocking layer disposed on the second-type doped semiconductor layer in the second region, wherein the current-blocking layer comprises a main body and an extending portion extended from the main body; a current-spreading layer disposed on the second-type doped semiconductor layer and the current-blocking layer, and an insulation layer covering a portion of the first-type doped semiconductor layer, the quantum well layer, and the second-type doped semiconductor layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A light-emitting diode (LED), comprising:
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a semiconductor epitaxial layer comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer, wherein the quantum well layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer, a recessed portion is formed in the semiconductor epitaxial layer, the recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and exposes the first-type doped semiconductor layer, and defines a first region and a second region on the semiconductor epitaxial layer, wherein the first region and the second region respectively contain a portion of the second-type doped semiconductor layer, a portion of the quantum well layer, and a portion of the first-type doped semiconductor layer and are connected to each other via the first-type doped semiconductor layer; a first electrode located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer, the first electrode comprising a soldering portion and a branch portion extended from the soldering portion; a second electrode located in the second region and electrically connected to the second-type doped semiconductor layer; and an insulation layer covering a portion of the first-type doped semiconductor layer, the quantum well layer, and the second-type doped semiconductor layer, wherein the insulation layer respectively has a second opening, a third opening, and at least one fourth opening, the second opening is located in the second region and exposes the second-type doped semiconductor layer, the third opening is located in the first region and exposes a portion of the second-type doped semiconductor layer in the first region, and the at least one fourth opening exposing the first-type doped semiconductor is arranged along an extending direction of the branch portion of the first electrode. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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31. A light-emitting diode (LED), comprising:
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a semiconductor epitaxial layer comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer, wherein the quantum well layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer, a recessed portion is formed in the semiconductor epitaxial layer, the recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and exposes the first-type doped semiconductor layer, and defines a first region and a second region on the semiconductor epitaxial layer, wherein the first region and the second region respectively contain a portion of the second-type doped semiconductor layer, a portion of the quantum well layer, and a portion of the first-type doped semiconductor layer and are connected to each other via the first-type doped semiconductor layer; a first electrode located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer, wherein the first electrode further comprises a soldering portion and a branch portion extended from the soldering portion, the soldering portion is disposed on a portion of the second-type doped semiconductor layer, and the branch portion is disposed on a portion of the first-type doped semiconductor layer; a second electrode located in the second region and electrically connected to the second-type doped semiconductor layer; a current-blocking layer disposed on the second-type doped semiconductor layer in the second region, wherein the current-blocking layer comprises a main body and an extending portion extended from the main body; and a current-spreading layer disposed on the second-type doped semiconductor layer and the current-blocking layer. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification