Thin film light emitting diode

• US 10,326,059 B2
• Filed: 06/26/2017
• Issued: 06/18/2019
• Est. Priority Date: 06/26/2002
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Primary Examiner(s): Fahmy, Wael M
• Assistant Examiner(s): Salerno, Sarah K
• Application Number:
  US15/633,440
• Publication Number:
  US 20170301831A1
• Time in Patent Office: 722 Days
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/4918 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/504 : Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, in which the n-electrode has a plurality of layers; a phosphor layer disposed on a top surface of the light emitting structure; and a passivation layer disposed between the phosphor layer and the top surface of the light emitting structure, and disposed on outermost side surfaces of the light emitting structure, in which the p-electrode and the n-electrode are disposed on opposite sides of the light emitting structure. Also, the phosphor layer has a two-digit micrometer thickness, and includes a pattern to bond an n-electrode pad on a portion of the n-electrode by a wire, and comprises different phosphor materials configured to emit light of different colors.

Claims

1. A light emitting device, comprising:

a light emitting structure including a p-GaN based semiconductor layer, an active layer having multiple quantum wells, and an n-GaN based semiconductor layer;

a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, wherein the n-electrode has a plurality of layers;

a first passivation layer including a first portion contacting a portion of the n-electrode, a second portion vertically overlapped with the p-electrode, and a third portion that extends outside of outermost side surfaces of the light emitting structure;

a phosphor layer disposed on a top surface of the light emitting structure; and

a second passivation layer including a first portion disposed between the phosphor layer and the top surface of the light emitting structure, and a second portion disposed on the outermost side surfaces of the light emitting structure,

wherein the phosphor layer includes a pattern to bond a wire with a p-pad on a portion of the p-electrode, and

wherein the second portion of the second passivation layer extends toward the third portion of the first passivation and contacts the third portion of the first passivation layer.

2. The light emitting device of claim 1, wherein the phosphor layer comprises different phosphor materials configured to emit light of different colors.

3. The light emitting device of claim 1, wherein the phosphor layer directly contacts the first portion of the second passivation layer.

4. The light emitting device of claim 3, wherein the phosphor layer comprises different phosphor materials configured to emit light of different colors.

5. The light emitting device of claim 1, wherein the phosphor layer is formed by a coating process.

6. The light emitting device of claim 1, further comprising a transparent conductive layer disposed between the p-GaN based semiconductor layer and the p-electrode, wherein the transparent conductive layer is ITO (indium-tin-oxide).

7. The light emitting device of claim 1, wherein the phosphor layer is further disposed on the second portion of the second passivation layer disposed on a plurality of the outermost side surfaces of the light emitting structure.

8. The light emitting device of claim 1, wherein the phosphor layer contacts the p-electrode pad.

9. The light emitting device of claim 8, wherein the second passivation layer is thinner than the phosphor layer.

10. The light emitting device of claim 1, wherein the second passivation layer includes at least one of SiO₂, SiN, Si₃N₄, and epoxy.

11. The light emitting device of claim 1, wherein the n-electrode comprises Ti and Al.

12. The light emitting device of claim 1, wherein the phosphor layer is formed by a coating process.