RF circuit with switch transistor with body connection
First Claim
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1. A Radio Frequency (RF) switch core comprising:
- a first RF switch coupled in series between an upstream RF node and a downstream RF node, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each of the transistors of the first series connected plurality of transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is positively biased higher than the first gate control voltage during an ON state of the first RF switch; and
a second RF switch coupling the downstream RF node to ground, wherein the second RF switch comprises a second series connected plurality of transistors, further wherein each of the transistors of the second series connected plurality of transistors includes a second gate control voltage and a second body control voltage, further wherein the second body control voltage is positively biased during an ON state of the second RF switch.
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Abstract
In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
30 Citations
20 Claims
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1. A Radio Frequency (RF) switch core comprising:
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a first RF switch coupled in series between an upstream RF node and a downstream RF node, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each of the transistors of the first series connected plurality of transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is positively biased higher than the first gate control voltage during an ON state of the first RF switch; and a second RF switch coupling the downstream RF node to ground, wherein the second RF switch comprises a second series connected plurality of transistors, further wherein each of the transistors of the second series connected plurality of transistors includes a second gate control voltage and a second body control voltage, further wherein the second body control voltage is positively biased during an ON state of the second RF switch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A Radio Frequency (RF) circuit comprising:
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a first RF switch coupled in series between an RF antenna side node and an RF downstream node, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each transistor of the first series connected plurality of transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is positively biased higher than the first gate control voltage during an ON state of the first RF switch; a second RF switch coupling the RF downstream node to ground, wherein the second RF switch comprises a second series connected plurality of transistors, further wherein each transistor of the second series connected plurality of transistors includes a second gate control voltage and a second body control voltage, further wherein the second body control voltage is positively biased during an ON state of the second RF switch; and means for producing the first gate control voltage, the second gate control voltage, the first body control voltage, and the second body control voltage. - View Dependent Claims (11, 12, 13, 14)
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15. A Radio Frequency (RF) circuit for routing an RF carrier signal between an antenna and downstream components of an RF device, the RF circuit comprising:
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a first RF switch coupled between the antenna and a downstream node, wherein the first RF switch comprises a first plurality of N-channel transistors connected in series, further wherein each N-channel transistor of the first plurality of N-channel transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is positively biased higher than the first gate control voltage during an ON state of the first RF switch; and a second RF switch coupled between the downstream node and ground, wherein the second RF switch comprises a second plurality of N-channel transistors connected in series, further wherein each N-channel transistor of the second plurality of N-channel transistors includes a second gate control voltage and a second body control voltage, further wherein the second body control voltage is positively biased during an ON state of the second RF switch. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification