RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication
First Claim
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1. A field effect transistor (FET) circuit comprising:
- a semiconductor substrate with an active surface;
a source terminal coupled to the active surface;
a drain terminal coupled to the active surface;
a multi-gate FET channel in the semiconductor substrate between the source and drain terminals;
a plurality of gate structures coupled to the active surface over the multi-gate FET channel;
a first channel contact coupled to the active surface over the multi-gate FET channel between a first pair of gate structures of the plurality of gate structures; and
a first capacitor electrically coupled between the first channel contact and a first gate structure of the plurality of gate structures.
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Abstract
Embodiments of field effect transistor (FET) circuits, RF switches, and devices include source and drain terminals coupled to an active surface of a semiconductor substrate, a channel in the substrate between the source and drain terminals, and a plurality of gate structures coupled to the active surface over the channel. A channel contact is coupled to the active surface over the channel between a first pair of the gate structures, and a first capacitor is electrically coupled between the channel contact and a gate structure of the plurality of gate structures.
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Citations
20 Claims
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1. A field effect transistor (FET) circuit comprising:
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a semiconductor substrate with an active surface; a source terminal coupled to the active surface; a drain terminal coupled to the active surface; a multi-gate FET channel in the semiconductor substrate between the source and drain terminals; a plurality of gate structures coupled to the active surface over the multi-gate FET channel; a first channel contact coupled to the active surface over the multi-gate FET channel between a first pair of gate structures of the plurality of gate structures; and a first capacitor electrically coupled between the first channel contact and a first gate structure of the plurality of gate structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A radio frequency switch comprising:
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an antenna node; a first transmit/receive (T/R) node; a first field effect transistor (FET) between the antenna node and the first T/R node, wherein the first FET includes a semiconductor substrate with an active surface, a source terminal coupled to the active surface, a drain terminal coupled to the active surface, a multi-gate FET channel in the semiconductor substrate between the source and drain terminals, and a plurality of gate structures coupled to the active surface over the multi-gate FET channel; a first channel contact coupled to the active surface over the multi-gate FET channel between a first pair of gate structures of the plurality of gate structures; and a first capacitor electrically coupled between the first channel contact and a first gate structure of the plurality of gate structures. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification