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Ceramic pressure measurement cell and method for production thereof

  • US 10,330,549 B2
  • Filed: 04/22/2014
  • Issued: 06/25/2019
  • Est. Priority Date: 05/17/2013
  • Status: Active Grant
First Claim
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1. A method of bonding two ceramic components using an active brazing solder, comprising:

  • providing the two ceramic components;

    preparing a solder stop layer on at least one surface of at least one ceramic component, which separates a portion of the surface to be wetted by the solder from a portion to be kept free of the solder;

    providing the active brazing solder between the first and the second ceramic component in the surface areas of the first and of the second component to be wetted by the active brazing solder;

    heating the ceramic components and the active brazing solder under vacuum up to a temperature at which the active brazing solder melts and reacts with the ceramic components; and

    allowing the ceramic components to cool down, wherein;

    the solder stop layer comprises a metal oxide, which has an oxygen coexistence decomposition pressure of not less than 10

    24
    MPa (10

    23·

    bar) and not more than 10

    13
    MPa (10

    12·

    bar) at an inverse temperature of 8·

    10

    4
    /K and an oxygen coexistence decomposition pressure of not less than 10

    28
    MPa (10

    27
    bar) and not more than 10

    16
    MPa (10

    15
    bar) at an inverse temperature of 9·

    10

    4
    /K;

    for producing a pressure measurement cell, the first ceramic component comprises a counterpart and a second ceramic component comprises a measurement membrane, wherein the counterpart is connected pressure-tight with the measurement membrane by means of a joint, formed by said active brazing solder;

    the ceramic material of said measurement membrane and said counterpart comprise an aluminum oxide ceramic;

    said active brazing solder comprises a Zi-Ni—

    Ti—

    containing active brazing solder; and

    said solder stop layer has a thickness of no more than 0.2 micron;

    wherein the preparation of the solder stop layer comprises sputtering or gas phase deposition of the metal, followed by oxidation; and

    wherein the oxidation is carried out by heating in an oxygen-containing atmosphere, and said oxidation takes place by heating to a temperature of not less than 500°

    C.

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