Systems and methods for determining a self-discharge current characteristic of a storage cell

• US 10,330,715 B2
• Filed: 12/11/2016
• Issued: 06/25/2019
• Est. Priority Date: 12/11/2016
• Status: Active Grant

• Current Assignee: Keysight Technologies, Inc.
• Original Assignee: Keysight Technologies, Inc.
• Inventors: Brorein, Edward, Vulovic, Marko, Boswell, Bryan, Zollo, Robert
• Primary Examiner(s): Phan, Huy Q
• Assistant Examiner(s): Ferdous, Zannatul
• Application Number:
  US15/375,123
• Publication Number:
  US 20180164363A1
• Time in Patent Office: 926 Days
• CPC Class Codes: G01R 31/367 Software therefor, e.g. for battery testing using modelling or look-up tables
• CPC Class Codes: G01R 31/374 with means for correcting the measurement for temperature or ageing
• CPC Class Codes: G01R 31/3865 related to manufacture, e.g. testing after manufacture
• CPC Class Codes: G01R 31/396 Acquisition or processing of data for testing or for monitoring individual cells or groups of cells within a battery
• CPC Class Codes: G01R 31/52 Testing for short-circuits, leakage current or ground faults
• CPC Class Codes: Y02E 60/10 Energy storage using batteries

Abstract

In accordance with one illustrative embodiment, a system for determining a self-discharge current characteristic of a storage cell (or a bank of storage cells) includes a voltage source, first and second voltage measurement circuits, a current measurement circuit, and a processor. The voltage source provides a potentiostat voltage to the storage cell coupled to the system. The first voltage measurement circuit provides a first voltage resolution for measuring an open circuit voltage across a pair of terminals of the storage cell. The second voltage measurement circuit provides a second voltage resolution that is significantly higher than the first voltage resolution for measuring a terminal voltage at one of the pair of terminals of the storage cell. The processor executes a test procedure by using the voltage source, the first and second voltage measurement circuits, and the current measurement circuit, to determine the self-discharge leakage current characteristic of the storage cell.

Claims

1. A method comprising:

measuring an open circuit voltage across a pair of terminals of one of a storage cell or a bank of storage cells by using a first voltage measurement circuit that provides a first voltage resolution;

providing to the one of the storage cell or the bank of storage cells, a first potentiostat voltage that is determined at least in part by using the open circuit voltage measured using the first voltage measurement circuit;

measuring a terminal voltage, with reference to ground, at one of the pair of terminals of the one of the storage cell or the bank of storage cells by using a second voltage measurement circuit configured to provide a second voltage resolution that is higher than the first voltage resolution;

providing to the one of the storage cell or the bank of storage cells, a second potentiostat voltage that is based at least in part on the terminal voltage measured using the second voltage measurement circuit;

executing one or more self-discharge leakage current measurements upon the one of the storage cell or the bank of storage cells over a period of time after providing the second potentiostat voltage to the one of the storage cell or the bank of storage cells; and

using the one or more self-discharge leakage current measurements to determine a self-discharge leakage current characteristic of the one of the storage cell or the bank of storage cells.

2. The method of claim 1, wherein the first voltage measurement circuit provides a millivolt level of resolution and the second voltage measurement circuit provides a microvolt level of resolution, and wherein the one of the pair of terminals is a negative terminal of the one of the storage cell or the bank of storage cells.

3. The method of claim 2, wherein the millivolt level of resolution is obtained at least in part, by using one of a low gain or a unity gain amplifier, and the microvolt level of resolution is obtained at least in part, by using a high gain amplifier.

4. The method of claim 1, further comprising:

executing a temperature coefficient of voltage (TCV) characterization procedure upon the one of the storage cell or the bank of storage cells prior to measuring the open circuit voltage across the pair of terminals, the TCV characterization procedure comprising identifying at least one of a zero TCV value or one or more TCV values that are below a predefined threshold.

5. The method of claim 4, wherein executing the TCV characterization procedure comprises:

setting the one of the storage cell or the bank of storage cells to each of a plurality of state-of-charge (SOC) levels;

cycling the one of the storage cell or the bank of storage cells between at least two temperature levels when set to each of the plurality of SOC levels;

determining a plurality of TCV values corresponding to the plurality of SOC levels when cycling the one of the storage cell or the bank of storage cells between the at least two temperature levels; and

using the plurality of TCV values for identifying the at least one of the zero TCV value or the one or more TCV values that are below the predefined threshold.

6. The method of claim 5, wherein identifying the at least one of the zero TCV value or the one or more TCV values that are below a predefined threshold comprises using a graphical representation of the plurality of TCV values versus the plurality of SOC levels.

7. The method of claim 4, further comprising:

using the at least one of the zero TCV value or the one or more TCV values that are below the predefined threshold to set an initial state-of-charge (SOC) level of the one of the storage cell or the bank of storage cells prior to measuring the open circuit voltage across the pair of terminals.

8. A method comprising:

executing a temperature coefficient of voltage (TCV) characterization procedure upon one of a storage cell or a bank of storage cells for determining a TCV characteristic of the one of the storage cell or the bank of storage cells; and

using the TCV characteristic to set an initial state-of-charge (SOC) level of the one of the storage cell or the bank of storage cells prior to executing a test procedure for determining a self-discharge leakage current characteristic of the one of the storage cell or the bank of storage cells, the test procedure comprising;

providing two or more voltage measurement circuits;

using one of the two or more voltage measurement circuits to measure an open circuit voltage across a pair of terminals of the one of the storage cell or the bank of storage cells, the one of the two or more voltage measurement circuits providing a first voltage resolution;

providing to the one of the storage cell or the bank of storage cells, a first potentiostat voltage having a voltage amplitude that matches the open circuit voltage measured using the one of the two or more voltage measurement circuits;

executing one or more self-discharge leakage current measurements upon the one of the storage cell or the bank of storage cells over a period of time after at least providing the first potentiostat voltage to the one of the storage cell or the bank of storage cells; and

using the one or more self-discharge leakage current measurements to determine the self-discharge leakage current characteristic of the one of the storage cell or the bank of storage cells.

9. The method of claim 8, further comprising:

prior to executing the one or more self-discharge leakage current measurements, using another one of the two or more voltage measurement circuits to measure a terminal voltage at one of the pair of terminals of the one of the storage cell or the bank of storage cells, the another one of the two or more voltage measurement circuits providing a second voltage resolution that is higher than the first voltage resolution; and

prior to executing the one or more self-discharge leakage current measurements, providing to the one of the storage cell or the bank of storage cells, a second potentiostat voltage that is based at least in part on the terminal voltage at the one of the pair of terminals.

10. The method of claim 9, wherein the one of the two or more voltage measurement circuits includes a first analog-to-digital converter (ADC) and one of a low gain or a unity gain amplifier;

and the another one of the two or more voltage measurement circuits includes a second ADC and a high gain amplifier.

11. The method of claim 10, wherein the another one of the two or more voltage measurement circuits is a dual-function circuit comprising one or more switches that are controlled by a processing unit for measuring one of the terminal voltage at the one of the pair of terminals of the one of the storage cell or the bank of storage cells or a self-discharge leakage current of the one of the storage cell or the bank of storage cells.

12. The method of claim 8, wherein executing the TCV characterization procedure comprises:

setting the one of the storage cell or the bank of storage cells to each of a plurality of state-of-charge (SOC) levels;

cycling the one of the storage cell or the bank of storage cells between at least two temperature levels when set to each of the plurality of SOC levels; and

determining a plurality of TCV values corresponding to the plurality of SOC levels when cycling the one of the storage cell or the bank of storage cells between the at least two temperature levels.

13. The method of claim 8, wherein using the TCV characteristic to set the initial SOC level of the one of the storage cell or the bank of storage cells comprises:

using the TCV characteristic of the one of the storage cell or the bank of storage cells to identify at least one of a zero TCV value or one or more TCV values that are below a predefined threshold; and

setting the initial SOC level of the one of the storage cell or the bank of storage cells based at least in part on the at least one of the zero TCV value or the one or more TCV values that are below the predefined threshold.

14. A system comprising:

a first voltage measurement circuit that provides a first voltage resolution for measuring an open circuit voltage across a pair of terminals of one of a storage cell or a bank of storage cells;

a second voltage measurement circuit that provides a second voltage resolution for measuring a terminal voltage with reference to ground at one of the pair of terminals of the one of the storage cell or the bank of storage cells;

a current measurement circuit for measuring one or more self-discharge leakage currents of the one of the storage cell or the bank of storage cells; and

a processor coupled to the first voltage measurement circuit, the second voltage measurement circuit, and the current measurement circuit for executing a test procedure to determine a self-discharge leakage current characteristic of the one of the storage cell or the bank of storage cells.

15. The system of claim 14, wherein the first voltage measurement circuit comprises a first analog-to-digital converter (ADC) and one of a low gain amplifier or a unity gain amplifier that couples the open circuit voltage of the one of the storage cell or the bank of storage cells into the first ADC, and the second voltage measurement circuit comprises a second ADC and a high gain amplifier.

16. The system of claim 15, wherein the second voltage measurement circuit and the current measurement circuit are provided as a dual-function circuit that executes one or more functions of the second voltage measurement circuit and the current measurement circuit on a time-multiplexed basis.

17. The system of claim 15, further comprising a voltage source that is controllable by the processor for providing one or more potentiostat voltages to the one of the storage cell or the bank of storage cells.

18. The system of claim 17, wherein the voltage source comprises:

a digital-to-analog converter (DAC) configurable by the processor to generate the one or more potentiostat voltages; and

a unity gain amplifier coupled to the DAC, the unity gain amplifier configured to provide the one or more potentiostat voltages to the one of the storage cell or the bank of storage cells.

19. The system of claim 18, wherein each of the first ADC and the second ADC is a 12-bit ADC.

20. The system of claim 14, wherein the second voltage resolution is higher than the first voltage resolution, and wherein the one of the storage cell or the bank of storage cells comprises a rechargeable lithium ion cell.