Rule-based deployment of assist features

• US 10,331,039 B2
• Filed: 09/23/2015
• Issued: 06/25/2019
• Est. Priority Date: 10/02/2014
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hsu, Duan-Fu Stephen, Wampler, Kurt E.
• Primary Examiner(s): Memula, Suresh
• Application Number:
  US15/512,540
• Publication Number:
  US 20170329235A1
• Time in Patent Office: 1,371 Days
• Field of Search: 716 55
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Abstract

Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve, of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using one or more rules based on one or more parameters selected from: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.

Claims

1. A method to improve a patterning process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method comprising:

obtaining a rule configured to determine a characteristic of an assist feature based on a parameter selected from;

a characteristic of a design feature in the portion, a characteristic of the patterning process, a characteristic of the lithographic apparatus, and/or a combination selected from the foregoing;

determining, by a hardware computer using the rule, a distance between the assist feature and a design feature edge of a pair of design feature edges in the portion, based on a spacing between the pair of edges such that the assist feature is asymmetrical with respect to the pair of edges;

adjusting the characteristic, or adjusting another characteristic, of the assist feature using a model; and

placing the assist feature into the design layout for imaging using a patterning device.

2. The method of claim 1, where the rule is configured to determine the characteristic of the assist feature by binning the spacing.

3. The method of claim 1, further comprising determining the characteristic of the assist feature using the rule;

wherein the parameter comprises the spacing.

4. The method of claim 1, wherein the characteristic of the assist feature is selected from:

a number of assist features, a position of the assist feature, a shape of the assist feature, a transmission of the assist feature, a phase of the assist feature, a relative position to a reference point on the design layout, and/or a combination selected from the foregoing.

5. The method of claim 1, wherein the parameter comprises one or more selected from:

an orientation of a pair of edges, a slit position of a design feature, a size of a design feature, and/or a location of a design feature.

6. The method of claim 1, further comprising reducing pattern displacement error, contrast loss, best focus shift, tilt of a Bossung curve of the portion, or a combination selected from the foregoing, by adjusting a characteristic of an illumination within the lithographic apparatus.

7. The method of claim 1, wherein placing the assist feature reduces pattern displacement error, contrast loss, best focus shift, tilt of a Bossung curve of the portion, or a combination selected from the foregoing.

8. The method of claim 6, wherein adjusting the characteristic of the illumination changes a symmetry of illumination, an intensity of all or a portion of the illumination, or both.

9. The method of claim 1, wherein the lithographic apparatus comprises projection optics comprising a reflective optical component.

10. The method of claim 1, wherein the lithographic apparatus comprises non-telecentric optics.

11. The method of claim 1, wherein the portion of the design layout comprises one or more selected from:

an entire design layout, a clip, a section of a design layout that is known to have a critical feature, and/or a section of the design layout where a critical feature has been identified by a pattern selection method.

12. The method of claim 1, wherein the assist feature is placed between the pair of edges.

13. The method of claim 1, wherein adjusting the characteristic of the assist feature using a model comprises co-optimizing the assist feature with:

a design feature, a parameter of the patterning process, a parameter of the lithographic apparatus, or a combination selected from the foregoing.

14. A non-transitory computer readable medium having a rule recorded thereon, wherein the rule determines a characteristic of an assist feature based on a parameter selected from:

a characteristic of a design feature in a portion of a design layout for imaging onto a substrate using a lithographic apparatus by a pattering process, a characteristic of the patterning process, a characteristic of the lithographic apparatus, and/or a combination selected from the foregoing;

wherein, based on the rule, the assist feature is located asymmetrically with respect to a pair of design feature edges in the portion of the design layout dependent on a position of the design feature in a slit of illumination used to illuminate a patterning device configured to pattern the illumination according to the design feature for imaging on the substrate in the lithographic apparatus.

15. A non-transitory computer readable medium having instructions recorded thereon configured to cause a hardware computer system to at least:

obtain a rule configured to determine a characteristic of an assist feature based on a parameter selected from;

a characteristic of a design feature in a portion of a design layout for imaging onto a substrate using a lithographic apparatus by a pattering process, a characteristic of the patterning process, a characteristic of the lithographic apparatus, and/or a combination selected from the foregoing;

determine, using the rule, a distance between the assist feature and a design feature edge of a pair of design feature edges in the portion, based on a spacing between the pair of edges such that the assist feature is asymmetrical with respect to the pair of edges;

adjust the characteristic, or adjust another characteristic, of the assist feature using a model; and

place the assist feature into the design layout for imaging using a patterning device.

16. The non-transitory computer readable medium of claim 15, where the rule is configured to determine the characteristic of the assist feature by binning the spacing.

17. The non-transitory computer readable medium of claim 15, wherein the instructions are further configured to determine the characteristic of the assist feature using the rule;

wherein the parameter comprises the spacing.

18. The non-transitory computer readable medium of claim 15, wherein the characteristic of the assist feature is selected from:

a number of assist features, a position of the assist feature, a shape of the assist feature, a transmission of the assist feature, a phase of the assist feature, a relative position to a reference point on the design layout, and/or a combination selected from the foregoing.

19. The non-transitory computer readable medium of claim 15, wherein the parameter comprises one or more selected from:

an orientation of a pair of edges, a slit position of a design feature, a size of a design feature, and/or a location of a design feature.

20. The non-transitory computer readable medium of claim 15, wherein the instructions are further configured to the hardware computer system to reduce pattern displacement error, contrast loss, best focus shift, tilt of a Bossung curve of the portion, or a combination selected from the foregoing, by adjusting a characteristic of an illumination within the lithographic apparatus.