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Post UV cure for gapfill improvement

  • US 10,332,746 B1
  • Filed: 03/14/2018
  • Issued: 06/25/2019
  • Est. Priority Date: 03/14/2018
  • Status: Active Grant
First Claim
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1. A method for semiconductor processing, the method comprising:

  • performing a first deposition process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate;

    performing an etch process to remove a portion of the conformal film;

    repeating the first deposition process and the etch process to fill the feature with the conformal film; and

    exposing the conformal film to ultraviolet light.

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