Schemes for forming barrier layers for copper in interconnect structures
First Claim
Patent Images
1. A semiconductor device comprising:
- a conductive material embedded within a dielectric layer, the conductive material comprising a first element;
a first barrier layer lining sidewalls and a bottom surface of the conductive material, the first barrier layer comprising a second element different from the first element; and
a capping layer over the conductive material and the first barrier layer but not extending over the dielectric layer, the capping layer comprising;
a first material in physical contact with the conductive material, wherein the first material comprises the first element and a third element, the third element being different from the first element and the second element; and
a second material in physical contact with the first barrier layer, wherein the second material comprises the second element and the third element.
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Abstract
A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring. The lining barrier layer may comprise same materials as the barrier layer, and the lining barrier layer may be recessed before forming the barrier layer and may contain a metal that can be silicided.
27 Citations
20 Claims
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1. A semiconductor device comprising:
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a conductive material embedded within a dielectric layer, the conductive material comprising a first element; a first barrier layer lining sidewalls and a bottom surface of the conductive material, the first barrier layer comprising a second element different from the first element; and a capping layer over the conductive material and the first barrier layer but not extending over the dielectric layer, the capping layer comprising; a first material in physical contact with the conductive material, wherein the first material comprises the first element and a third element, the third element being different from the first element and the second element; and a second material in physical contact with the first barrier layer, wherein the second material comprises the second element and the third element. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a conductive material extending into a dielectric layer, the conductive material comprising a first element; a first barrier layer lining sidewalls of the conductive material, the first barrier layer comprising a second element different from the first element; and a second barrier layer over the conductive material and the first barrier layer, the second barrier layer comprising; a first region in physical contact with the conductive material, the first region comprising a silicide of the first element, the first region having a first thickness; and a second region in physical contact with the first barrier layer, the second region comprising a silicide of the second element, the second region having a second thickness different from the first thickness. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a dielectric layer extending along a sidewall of a conductive material, the conductive material comprising a first element; a first barrier layer between the sidewall of the conductive material and the dielectric layer, the first barrier layer comprising a second element different from the first element; and a second barrier layer over the conductive material and the first barrier layer, the second barrier layer comprising; a first region extending along a topmost surface of the conductive material, wherein the first region comprises the first element and a third element, the third element being different from the first element and the second element; and a second region extending along a topmost surface of the first barrier layer, wherein the second region comprises the second element and the third element. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification