Vertical solid-state transducers having backside terminals and associated systems and methods

• US 10,333,039 B2
• Filed: 02/07/2017
• Issued: 06/25/2019
• Est. Priority Date: 08/25/2011
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Odnoblyudov, Vladimir, Schubert, Martin F.
• Primary Examiner(s): Muse, Ismail A
• Application Number:
  US15/426,897
• Publication Number:
  US 20170148967A1
• Time in Patent Office: 868 Days
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Claims

1. A method of forming solid-state transducers (SSTs) having a first side and a second side, the method comprising:

forming a transducer structure having an active region positioned between a first semiconductor material and a second semiconductor material, wherein the first semiconductor material is at the first side of the SST and the second semiconductor material is at the second side of the SST;

forming a first contact on the first side of the SST;

forming a second contact on the first side of the SST, wherein the second contact includes a plurality of interconnected buried contact elements electrically coupled to the second semiconductor material;

forming a dielectric material on the first side of the SST leaving a portion of the first contact and a portion of the second contact exposed through the dielectric material;

disposing a conductive carrier substrate on the dielectric material, wherein the conductive carrier substrate is electrically coupled to the first and second contacts; and

electrically isolating the first contact from the second contact, wherein a portion of the conductive carrier substrate defines a first terminal electrically coupled to the first contact and a portion of the conductive carrier substrate defines a second terminal electrically coupled to the second contact, and wherein the first and second electrical terminals are both exposed at the first side of the SST;

wherein electrically isolating the first contact from the second contact comprises forming an isolating via around the portion of the first contact exposed through the dielectric material, wherein the isolating via extends through the carrier substrate to the dielectric material;

wherein the isolating via is a first isolating via, and wherein the method further comprises electrically isolating the first contact from the second contact by a second isolating via around the portion of the second contact exposed through the dielectric material; and

wherein the second isolating via extends through the carrier substrate to the dielectric material.

2. The method of claim 1, further comprising:

forming a plurality of separators that extend through the transducer structure to demarcate individual SSTs, wherein the separators project beyond the transducer structure toward the second side of the SST; and

forming discrete optical elements on the second side of the SST, wherein the separators form barriers between the discrete optical elements.

3. The method of claim 2 wherein forming the discrete optical elements comprises:

forming a first optical element on the second side of the SST, the first optical element having a first performance parameter; and

forming a second optical element on the second side of the SST, the second optical element having a second performance parameter different from the first performance parameter, wherein the first and second optical elements are separated by an adjoining separator.

4. The method of claim 2 wherein forming the discrete optical elements comprises:

forming a first discrete optical element configured to emit a first color of radiation; and

forming a second discrete optical element configured to emit a second color of radiation different from the first color, wherein the first and second optical elements are separated by an adjoining separator.

5. The method of claim 1 wherein forming the transducer structure comprises forming a transducer structure configured to emit electromagnetic radiation in at least one of the ultraviolet spectrum, the visible spectrum, and the infrared spectrum.

6. The method of claim 2 wherein at least one of the separators includes a dielectric isolator.

7. The method of claim 2 wherein at least one of the separators includes a barrier material.

8. The method of claim 2 wherein at least one of the separators includes a seed material.

9. The method of claim 1 further comprising forming a metal material on the dielectric material.

10. The method of claim 9 wherein the metal material contacts the portions of the first and second contacts that are exposed through the dielectric material.

11. The method of claim 10 wherein the metal material includes a via around at least one of the portions of the first and second contacts that are exposed through the dielectric material.