Transducer device comprising an insulating film between a through wiring line and a semiconductor substrate
First Claim
1. A device comprising:
- a semiconductor substrate including a first surface and a second surface opposite to the first surface;
a through wiring line passing through the substrate between the first surface and the second surface;
electrodes electrically connected to the through wiring line; and
an insulating film is disposed between the through wiring line and the semiconductor substrate,wherein the insulating film is a silicon oxide film, and wherein a silicon nitride film is disposed between the through wiring line and the semiconductor substrate.
1 Assignment
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Accused Products
Abstract
A method for creating an electronic device including a semiconductor substrate, an element unit, a through wiring line, and a wiring portion includes forming interstitial via holes in a first surface of the substrate, forming a first insulating film on the inner walls of the via holes, forming openings that reach the first insulating film on the bottoms of the via holes from a second surface of the substrate, forming a second insulating film on the bottoms of the openings, forming a through wiring line in the via holes, forming an element unit that electrically connects the through wiring line, reducing the thickness of the substrate from the second surface so that the second surface becomes flush with the second insulating film on the bottoms of the openings, and forming a wiring portion, on the second insulating film, that electrically connects to the through wiring line.
38 Citations
18 Claims
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1. A device comprising:
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a semiconductor substrate including a first surface and a second surface opposite to the first surface; a through wiring line passing through the substrate between the first surface and the second surface; electrodes electrically connected to the through wiring line; and an insulating film is disposed between the through wiring line and the semiconductor substrate, wherein the insulating film is a silicon oxide film, and wherein a silicon nitride film is disposed between the through wiring line and the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A device comprising:
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a semiconductor substrate including a first surface and a second surface opposite to the first surface; a through wiring line passing through the substrate between the first surface and the second surface; electrodes electrically connected to the through wiring line; and an insulating film between the through wiring line and the semiconductor substrate, the insulating film being a high dielectric strength film formed at a temperature of 800°
C. or higher and being one or more layers of a silicon thermal oxide film formed by thermal oxidation,wherein a silicon nitride film is disposed between the through wiring line and the semiconductor substrate. - View Dependent Claims (16, 17, 18)
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Specification