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FinFET gate structure and method for fabricating the same

  • US 10,340,192 B2
  • Filed: 11/15/2017
  • Issued: 07/02/2019
  • Est. Priority Date: 10/28/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a gate structure comprising;

    a high-k dielectric layer;

    a first metal layer over the high-k dielectric layer, wherein the first metal layer is a TiAl layer or a TaAl layer; and

    a metal filler over the first metal layer, wherein;

    a first surface of the first metal layer faces a gate spacer adjacent the gate structure,a second surface of the first metal layer faces the metal filler,a concentration of Al atoms at or near the first surface of the first metal layer is higher than a concentration of Al atoms in a region of the first metal layer between the first surface and the second surface, anda concentration of Al atoms at or near the second surface of the first metal layer is higher than the concentration of Al atoms in the region of the first metal layer between the first surface and the second surface.

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