Method of manufacturing semiconductor structure comprising plurality of through holes using metal hard mask
First Claim
1. A method for manufacturing a semiconductor structure comprising:
- forming a first portion of a dielectric layer to conceal a conductive structure;
removing some of the first portion of the dielectric layer to expose a top surface of the conductive structure, wherein a top of the first portion of the dielectric layer is at or above the top surface of the conductive structure after removing some of the first portion of the dielectric layer;
forming a second portion of the dielectric layer over the first portion of the dielectric layer and over the top surface of the conductive structure;
forming a metal hard mask over the dielectric layer;
patterning the metal hard mask to form a patterned metal hard mask;
patterning the first portion of the dielectric layer and the second portion of the dielectric layer with the patterned metal hard mask to define a first through hole extending through the first portion of the dielectric layer and the second portion of the dielectric layer; and
patterning the second portion of the dielectric layer with the patterned metal hard mask to define a second through hole extending through the second portion of the dielectric layer.
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Abstract
A method of manufacturing a semiconductor structure including a conductive structure, a dielectric layer, and a plurality of conductive features is disclosed. The dielectric layer is formed on the conductive structure. A plurality of through holes is formed in the dielectric layer using a metal hard mask, and at least one of the through holes exposes the conductive structure. The conductive features are formed in the through holes. At least one of the conductive features has a bottom surface and at least one sidewall. The bottom surface and the sidewall of the conductive feature intersect to form an interior angle. The interior angles of adjacent two of the conductive features have a difference less than or substantially equal to about 3 degrees.
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Citations
14 Claims
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1. A method for manufacturing a semiconductor structure comprising:
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forming a first portion of a dielectric layer to conceal a conductive structure; removing some of the first portion of the dielectric layer to expose a top surface of the conductive structure, wherein a top of the first portion of the dielectric layer is at or above the top surface of the conductive structure after removing some of the first portion of the dielectric layer; forming a second portion of the dielectric layer over the first portion of the dielectric layer and over the top surface of the conductive structure; forming a metal hard mask over the dielectric layer; patterning the metal hard mask to form a patterned metal hard mask; patterning the first portion of the dielectric layer and the second portion of the dielectric layer with the patterned metal hard mask to define a first through hole extending through the first portion of the dielectric layer and the second portion of the dielectric layer; and patterning the second portion of the dielectric layer with the patterned metal hard mask to define a second through hole extending through the second portion of the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor structure comprising:
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forming a first portion of a dielectric layer over a first portion of a conductive structure; forming a second portion of the dielectric layer over an exposed, second portion of the conductive structure and over the first portion of the dielectric layer; forming a metal hard mask over the dielectric layer; patterning the metal hard mask to form a patterned metal hard mask; patterning the first portion of the dielectric layer and the second portion of the dielectric layer with the patterned metal hard mask to define a first through hole extending through the first portion of the dielectric layer and the second portion of the dielectric layer; and patterning the second portion of the dielectric layer with the patterned metal hard mask to define a second through hole extending through the second portion of the dielectric layer. - View Dependent Claims (11, 12, 13, 14)
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Specification