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Semiconductor device and method for manufacturing the same

  • US 10,340,343 B2
  • Filed: 01/04/2018
  • Issued: 07/02/2019
  • Est. Priority Date: 10/31/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a gate electrode over the semiconductor substrate;

    a channel region between the semiconductor substrate and the gate electrode;

    a pair of source/drain regions adjacent to two opposing sides of the channel region in a channel length direction; and

    a threshold voltage adjusting region adjacent to two opposing sides of the channel region in a channel width direction, wherein the threshold voltage adjusting region and the channel region have the same doping type, and a depth of the threshold voltage adjusting region is greater than a depth of the pair of source/drain regions.

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