Semiconductor device and semiconductor device package including the same

• US 10,340,415 B2
• Filed: 08/31/2017
• Issued: 07/02/2019
• Est. Priority Date: 09/01/2016
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Oh, Hyun Jee, Choi, Rak Jun, Kim, Byeoung Jo
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US15/692,617
• Publication Number:
  US 20180069150A1
• Time in Patent Office: 670 Days
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 23/62 Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/34346 characterised by the materials of the barrier layers

Abstract

A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.

Claims

1. A semiconductor device comprising:

a light emitting structure that comprises;

a first conductivity type semiconductor layer having aluminum;

a second conductivity type semiconductor layer having aluminum; and

an active layer having aluminum and provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,

wherein;

when primary ions are bombarded on the light emitting structure to sputter away secondary ions of aluminum from the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer, secondary ions of aluminum are produced in respective intensities for the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer,

an intensity of the secondary ions of aluminum comprises a maximum intensity in the light emitting structure, a minimum intensity in the light emitting structure, a second intensity which is the smallest intensity in a region spaced away from the maximum intensity in a first direction, and a first peak intensity spaced away from the maximum intensity which is the greatest peak intensity in a region disposed between the maximum intensity and the second intensity,

wherein the maximum intensity is spaced away from the minimum intensity in the first direction, and the first peak intensity is spaced away from the maximum intensity in the first direction,

wherein the first conductivity type semiconductor layer includes a first region having the intensity of the secondary ions be between the first peak intensity and the second intensity, the second conductivity type semiconductor layer includes a second region having the intensity of the secondary ions be between the maximum intensity and the minimum intensity, and the active layer includes a third region having the intensity of the secondary ions be between the maximum intensity and the first peak intensity,

wherein the first direction is a thickness direction of the light emitting structure from the second conductivity type semiconductor layer towards the first conductivity type semiconductor layer,

wherein a first intensity difference (D1) between the maximum intensity and the second intensity is greater than a second intensity difference (D2) between the minimum intensity and the second intensity.

2. The semiconductor device of claim 1, wherein the intensity of the secondary ions comprises a plurality of increasing regions, a plurality of decreasing regions, and a plurality of peak intensities formed based on a transition between the increasing regions and the decreasing regions,

wherein the plurality of peak intensities comprises the first peak intensity, a plurality of sub peaks and a plurality of sub valleys,

wherein the plurality of sub peaks and the plurality of sub valleys are disposed between the maximum intensity and the first peak intensity, and

wherein the second intensity is spaced away from the first peak intensity in the first direction.

3. The semiconductor device of claim 2, wherein the active layer comprises a plurality of barrier layers and a plurality of well layers,

wherein an intensity of the secondary ions in the plurality of barrier layers comprises the plurality of sub peaks, and

wherein an intensity of the secondary ions in the plurality of well layers comprises the plurality of sub valleys.

4. The semiconductor device of claim 1, wherein the intensity of the secondary ions is a data measured by Time-of-Flight secondary ion mass spectrometry (TOF-SIMS),

wherein TOF-SIMS data is analyzed by emitting primary ions including O₂⁺, Cs⁺, Bi⁺ to a target surface and counting a number of secondary ions discharged,

wherein measurement condition of the TOF-SIMS comprises an acceleration voltage adjusted within a range of about 20 keV to about 30 KeV and an emitted current adjusted within a range of about 0.1 pA to about 5.0 pA.

5. The semiconductor device of claim 1, wherein the minimum intensity is exhibited at a surface of the second conductivity type semiconductor layer.

6. The semiconductor device of claim 1, wherein a ratio (D1:

D2) of the first intensity difference to the second intensity difference ranges from 1;

0.2 to 1;

2.

7. The semiconductor device of claim 1, wherein at a first prescribed distance from a surface of the second conductivity type semiconductor layer, the second conductivity type semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second intensity, which is between the minimum intensity and the maximum intensity, wherein the maximum intensity occurs at a second prescribed distance from the first prescribed distance,

wherein a ratio of the second prescribed distance to the first prescribed distance is within a range of 1:

0.2 to 1;

1.

8. The semiconductor device of claim 7, wherein the intensity exhibited in the second conductivity type semiconductor layer between the minimum intensity and the first intermediate intensity comprises two intensity peaks and an intensity valley between the two intensity peaks.

9. The semiconductor device of claim 8, wherein the intensity at the two intensity peaks is greater than the intensity at the intensity valley.

10. The semiconductor device of claim 1, wherein the second conductivity type semiconductor layer is a P-type semiconductor layer and a blocking layer, and the first conductivity type semiconductor layer is an N-type semiconductor layer.

11. The semiconductor device of claim 10, wherein the second conductivity type semiconductor layer comprises a P-type dopant including Mg and the first conductivity type semiconductor layer comprises an N-type dopant including Si.

12. The semiconductor device of claim 1, wherein the first conductivity type semiconductor layer exhibits the first peak intensity at a portion of the first conductivity type semiconductor layer closest to the active layer.

13. The semiconductor device of claim 12, wherein the intensity exhibited in the active layer is smaller than the maximum intensity and the first peak intensity and is greater than the minimum intensity and the second intensity.

14. The semiconductor device of claim 1, further comprising:

a first electrode electrically connected with the first conductivity type semiconductor layer; and

a second electrode electrically connected with the second conductivity type semiconductor layer,

wherein;

the second conductivity type semiconductor layer comprises a first surface on which the second electrode is positioned, the first surface being positioned opposite to the active layer; and

the second conductivity type semiconductor layer exhibits the minimum intensity at the first surface.

15. The semiconductor device of claim 1, wherein the second conductivity type semiconductor layer comprises a blocking layer provided as a portion of the second conductivity type semiconductor layer closest to the active layer.

16. The semiconductor device of claim 15, wherein the maximum intensity is exhibited in the blocking layer.

17. The semiconductor device of claim 1, wherein:

the second conductivity type semiconductor layer comprises a first sublayer and a second sublayer, wherein the first sublayer comprises a first surface to receive the primary ions prior to a second surface of the first sublayer and prior to the second sublayer, wherein the first sublayer has a lower composition of aluminum than the second sublayer,

wherein each of the first sublayer and the second sublayer comprises aluminum-gallium-nitride (AlGaN).

18. The semiconductor device of claim 1, wherein the first intensity difference is greater than 0, and the second intensity difference is greater than 0.

19. The semiconductor device of claim 1, wherein the first conductivity type semiconductor layer comprises a first conductivity type semiconductor material having an empirical formula In_x1Al_y1Ga_1-x1-y1N (0≤

x1≤

1, 0≤

y1≤

1, and 0≤

x1+y1≤

1), and the second conductivity type semiconductor layer comprises a second conductivity type semiconductor material having an empirical formula In_x5Al_y2Ga_1-x5-y2N (0≤

x5≤

1, 0≤

y2≤

1, and 0≤

x5+y2≤

1).

20. A semiconductor device package comprising:

a body; and

a semiconductor device disposed on the body, wherein the semiconductor device has a light emitting structure including;

a first conductivity type semiconductor layer having aluminum;

a second conductivity type semiconductor layer having aluminum; and

an active layer having aluminum and provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,

wherein;

when primary ions are bombarded on the light emitting structure to sputter away secondary ions of aluminum from the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer, secondary ions of aluminum are produced in respective intensities for the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer,

an intensity of the secondary ions of aluminum comprises a maximum intensity in the light emitting structure, a minimum intensity in the light emitting structure, a second intensity which is the smallest intensity in a region spaced away from the maximum intensity in a first direction, and a first peak intensity spaced away from the maximum intensity which is the greatest peak intensity in a region disposed between the maximum intensity and the second intensity,

wherein the maximum intensity is spaced away from the minimum intensity in the first direction and the first peak intensity is spaced away from the maximum intensity in the first direction,

wherein the first conductivity type semiconductor layer includes a first region having the intensity of the secondary ions be between the first peak intensity and the second intensity, the second conductivity type semiconductor layer includes a second region having the intensity of the secondary ions be between the maximum intensity and the minimum intensity, and the active layer includes a third region having the intensity of the secondary ions be between the maximum intensity and the first peak intensity, wherein the first direction is a thickness direction of the light emitting structure from the second conductivity type semiconductor layer towards the first conductivity type semiconductor layer,

wherein a first intensity difference (D1) between the maximum intensity and the second intensity is greater than a second intensity difference (D2) between the minimum intensity and the second intensity.