OLED panel fabrication method and OLED panel

• US 10,340,475 B2
• Filed: 09/15/2017
• Issued: 07/02/2019
• Est. Priority Date: 08/28/2017
• Status: Active Grant

• Current Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Ltd.
• Original Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Ltd.
• Inventors: Wu, Chienlin
• Primary Examiner(s): Le, Dung A.
• Application Number:
  US15/571,035
• Publication Number:
  US 20190067629A1
• Time in Patent Office: 655 Days
• Field of Search: None
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

The present invention provides an OLED panel fabrication method and an OLED panel. The OLED panel fabrication method of the present invention is such that at least two loops of spaced barrier walls are provided on an outer circumference of the OLED device and inkjet printing is applied to form, in sequence, an organic buffer layer between a first inorganic blocking layer and a second inorganic blocking layer at a location above a light emission area defined and delimited by the barrier walls and a loop of densification layer between the first inorganic blocking layer and the second inorganic blocking layer at a location above an area between two adjacent ones of the barrier walls so as to form a complicated path that retards invasion of water vapor and oxygen in a lateral side encapsulation structure to improve a lateral side film encapsulation effect thereby providing a film encapsulation structure having an increased gas blocking capability to effectively protect the OLED device, increase the life span of the OLED device, and suit the need of encapsulation of a flexible OLED panel. In addition, the fabrication method is easy to carry out.

Claims

1. An organic light emitting display (OLED) panel fabrication method, comprising the following steps:

Step S1;

providing a substrate, forming an OLED device on the substrate; and

arranging at least two circumferential loops of barrier walls, which are spaced from each other, on the substrate along an outer circumference of the OLED device, wherein an innermost loop of the barrier walls defines and delimits a light emission area on the substrate;

Step S2;

depositing a first inorganic blocking layer of an entire surface to completely cover the OLED device and entirety of the barrier walls;

Step S3;

coating and forming an organic buffer layer on a portion of the first inorganic blocking layer that corresponds to the light emission area and coating and forming a densification layer on a portion of the first inorganic blocking layer that corresponds to an area between every two adjacent ones of the barrier walls; and

Step S4;

depositing a second inorganic blocking layer of an entire surface to completely cover the organic buffer layer, entirety of the densification layer, and the entirety of the barrier walls;

wherein the at least two circumferential loops of barrier walls comprise three circumferential loops including the innermost loop, an intermediate loop, and an outermost loop, and the densification layer comprises a first densification layer formed between the barrier walls of the innermost and the intermediate loop and a second densification layer formed between the barrier walls of the intermediate loop and the outermost loop, wherein the first and second densification layers are both formed on the first inorganic blocking layer and are both covered by the second inorganic blocking layer, such that the first and second densification layers are interposed between the first and second inorganic layers and separate from each other.

2. The OLED panel fabrication method as claimed in claim 1, wherein Step S3 adopts an inkjet printing operation to form the densification layer and the organic buffer layer,

wherein the densification layer has a height equal to or less than a height of the barrier walls;

and the height of the densification layer is equal to or greater than a height of the organic buffer layer.

3. The OLED panel fabrication method as claimed in claim 1, wherein the densification layer is formed of a material that comprises one or multiple ones of acrylate, epoxy, siloxane, silicon nitride, silicon dioxide, silicon oxynitride, aluminum oxide, and titanium oxide.

4. The OLED panel fabrication method as claimed in claim 1, wherein the densification layer comprises a moisture absorbent to provide a function of moisture absorption.

5. The OLED panel fabrication method as claimed in claim 1, wherein Step S2 adopts plasma enhanced chemical vapor deposition to deposit and form the first inorganic blocking layer;

Step S4 adopts plasma enhanced chemical vapor deposition to deposit and form the second inorganic blocking layer;

the barrier walls formed in Step S1 are formed of a material that comprises an organic photoresist material;

the organic buffer layer is formed of a material that comprises one or multiple ones of acrylate, epoxy, and siloxane; and

the first inorganic blocking layer and the second inorganic blocking layer are each formed of a material that comprises one or multiple ones of silicon nitride, silicon dioxide, silicon oxynitride, aluminum oxide, and titanium oxide.

6. An organic light emitting diode (OLED) panel, comprising:

a substrate;

an OLED device arranged on the substrate;

at least two loops of barrier walls that are arranged on the substrate to be spaced from each other and located along an outer circumference of the OLED device, wherein an innermost loop of the barrier walls defines and delimits a light emission area on the substrate;

a first inorganic blocking layer of an entire surface to completely cover the OLED device and entirety of the barrier walls;

an organic buffer layer arranged on a portion of the first inorganic blocking layer that corresponds to the light emission area;

a densification layer arranged between every two adjacent ones of the barrier walls; and

a second inorganic blocking layer of an entire surface to completely cover the organic buffer layer, entirety of the densification layer, and the entirety of the barrier walls;

wherein the at least two circumferential loops of barrier walls comprise three circumferential loops including the innermost loop, an intermediate loop, and an outermost loop, and the densification layer comprises a first densification layer formed between the barrier walls of the innermost and the intermediate loop and a second densification layer formed between the barrier walls of the intermediate loop and the outermost loop, wherein the first and second densification layers are both formed on the first inorganic blocking layer and are both covered by the second inorganic blocking layer, such that the first and second densification layers are interposed between the first and second inorganic layers and separate from each other.

7. The OLED panel as claimed in claim 6, wherein the densification layer has a height equal to or less than a height of the barrier walls;

and the height of the densification layer is equal to or greater than a height of the organic buffer layer.

8. The OLED panel as claimed in claim 6, wherein the densification layer is formed of a material that comprises one or multiple ones of acrylate, epoxy, siloxane, silicon nitride, silicon dioxide, silicon oxynitride, aluminum oxide, and titanium oxide.

9. The OLED panel as claimed in claim 6, wherein the densification layer comprises a moisture absorbent to provide a function of moisture absorption.

10. The OLED panel as claimed in claim 6, wherein the organic buffer layer is formed of a material that comprises one or multiple ones of acrylate, epoxy, and siloxane;

and

the first inorganic blocking layer and the second inorganic blocking layer are each formed of a material that comprises one or multiple ones of silicon nitride, silicon dioxide, silicon oxynitride, aluminum oxide, and titanium oxide.

11. An organic light emitting display (OLED) panel fabrication method, comprising the following steps:

Step S1 ;

providing a substrate, forming an OLED device on the substrate; and

arranging at least two circumferential loops of barrier walls, which are spaced from each other, on the substrate along an outer circumference of the OLED device, wherein an innermost loop of the barrier walls defines and delimits a light emission area on the substrate;

Step S2 ;

depositing a first inorganic blocking layer of an entire surface to completely cover the OLED device and entirety of the barrier walls;

Step S3 ;

coating and forming an organic buffer layer on a portion of the first inorganic blocking layer that corresponds to the light emission area and coating and forming a densification layer on a portion of the first inorganic blocking layer that corresponds to an area between every two adjacent ones of the barrier walls; and

Step S4;

depositing a second inorganic blocking layer of an entire surface to completely cover the organic buffer layer, entirety of the densification layer, and the entirety of the barrier walls;

wherein the densification layer has a height equal to or less than a height of the barrier walls; and

wherein the at least two circumferential loops of barrier walls comprise three circumferential loops including the innermost loop, an intermediate loop, and an outermost loop, and the densification layer comprises a first densification layer formed between the barrier walls of the innermost and the intermediate loop and a second densification layer formed between the barrier walls of the intermediate loop and the outermost loop, wherein the first and second densification layers are both formed on the first inorganic blocking layer and are both covered by the second inorganic blocking layer, such that the first and second densification layers are interposed between the first and second inorganic layers and separate from each other.

12. The OLED panel fabrication method as claimed in claim 11, wherein the height of the densification layer is equal to or greater than a height of the organic buffer layer.

13. The OLED panel fabrication method as claimed in claim 11, wherein the densification layer is formed of a material that comprises one or multiple ones of acrylate, epoxy, siloxane, silicon nitride, silicon dioxide, silicon oxynitride, aluminum oxide, and titanium oxide.

14. The OLED panel fabrication method as claimed in claim 11, wherein the densification layer comprises a moisture absorbent to provide a function of moisture absorption.

15. The OLED panel fabrication method as claimed in claim 11, wherein Step S2 autopsy plasma enhanced chemical vapor deposition to deposit and form the first inorganic blocking layer;

Step S4 adopts plasma enhanced chemical vapor deposition to deposit and form the second inorganic blocking layer;

the barrier walls formed in Step S1 are formed of a material that comprises an organic photoresist material;

the organic buffer layer is formed of a material that comprises one or multiple ones of acrylate, epoxy, and siloxane; and

the first inorganic blocking layer and the second inorganic blocking layer are each formed of a material that comprises one or multiple ones of silicon nitride, silicon dioxide, silicon oxynitride, aluminum oxide, and titanium oxide.