Induction-coupled plasma synthesis of boron nitrade nanotubes
First Claim
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1. An apparatus for ICP-based BNNT synthesis, the apparatus comprising:
- a. a chamber having an elevated pressure nitrogen gas inlet upstream of a boron-containing feedstock inlet;
b. an elevated pressure nitrogen gas supply connected to the elevated pressure nitrogen gas inlet;
c. a boron-containing feedstock supply connected to the feedstock inlet;
d. an induction-coupled plasma (ICP) head downstream of the gas inlet;
e. a nucleation zone within the chamber and downstream of the ICP head;
f. a growth zone within the chamber and downstream of the nucleation zone; and
g. a collection zone within the chamber and downstream of the growth zone.
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Abstract
Described herein are processes and apparatus for the large-scale synthesis of boron nitride nanotubes (BNNTs) by induction-coupled plasma (ICP). A boron-containing feedstock may be heated by ICP in the presence of nitrogen gas at an elevated pressure, to form vaporized boron. The vaporized boron may be cooled to form boron droplets, such as nanodroplets. Cooling may take place using a condenser, for example. BNNTs may then form downstream and can be harvested.
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Citations
15 Claims
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1. An apparatus for ICP-based BNNT synthesis, the apparatus comprising:
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a. a chamber having an elevated pressure nitrogen gas inlet upstream of a boron-containing feedstock inlet; b. an elevated pressure nitrogen gas supply connected to the elevated pressure nitrogen gas inlet; c. a boron-containing feedstock supply connected to the feedstock inlet; d. an induction-coupled plasma (ICP) head downstream of the gas inlet; e. a nucleation zone within the chamber and downstream of the ICP head; f. a growth zone within the chamber and downstream of the nucleation zone; and g. a collection zone within the chamber and downstream of the growth zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An apparatus for ICP-based BNNT synthesis, the apparatus comprising a chamber having:
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a. an elevated pressure nitrogen gas inlet upstream of a boron-containing feedstock inlet; b. a boron-containing feedstock supply connected to the feedstock inlet; c. an induction-coupled plasma (ICP) head downstream of the gas inlet; d. a nucleation zone downstream of the ICP head; e. a growth zone downstream of the nucleation zone; and f. a collection zone downstream of the growth zone and having at least one of a solid surface condenser, a collection surface, and a filter. - View Dependent Claims (13, 14, 15)
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Specification