Method for etching layer to be etched

• US 10,347,499 B2
• Filed: 04/06/2016
• Issued: 07/09/2019
• Est. Priority Date: 04/20/2015
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Maruyama, Koji, Koshiishi, Akira, Haga, Toshio, Horiguchi, Masato, Kato, Makoto
• Primary Examiner(s): Norton, Nadine G
• Assistant Examiner(s): Dahimene, Mahmoud
• Application Number:
  US15/567,037
• Publication Number:
  US 20180144948A1
• Time in Patent Office: 1,189 Days
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32871 Means for trapping or directing unwanted particles
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm² or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm² or less is supplied to the lower electrode for a period of 0.5 seconds or less.

Claims

1. A method for etching a layer to be etched of a workpiece, the method comprising:

mounting the workpiece on a mounting stage in a processing container of a plasma processing apparatus, wherein the processing container provides an internal space including a first space and a second space, the mounting stage includes a lower electrode and is provided in the first space, and an ion trap is provided between the first space and the second space to substantially trap all ions from a plasma generated in the second space;

adsorbing radicals to the layer without applying a frequency bias to the lower electrode, wherein the radicals are generated from a processing gas including a rare gas in the second space and supplied from the second space to the first space through the ion trap; and

drawing ions into the layer by applying the frequency bias to the lower electrode, wherein said drawing ions is performed in a state where the processing gas is supplied to the second space in succession to said adsorbing radicals, the rare gas included in the processing gas is supplied from the second space to the first space through the ion trap, and the ions are generated from the rare gas in the first space by the frequency bias applied to the lower electrode,

wherein said adsorbing radicals and said drawing ions are alternately repeated, and

in said drawing ions, the frequency bias having a power density of 0.07 W/cm² or less at a surface of the lower electrode is supplied to the lower electrode or the frequency bias having a power density of 0.14 W/cm² or less at the surface of the lower electrode is supplied to the lower electrode for a period of 0.5 seconds or less.

2. The method according to claim 1,

wherein in said drawing ions, the frequency bias having a power density of 0.07 W/cm² or less at the surface of the lower electrode is supplied to the lower electrode for a period of 2 seconds or less.

3. The method according to claim 1,

wherein during an execution period of said drawing ions, impedance of a matching unit is fixed, the matching unit being provided between a power supply configured to generate the frequency bias and the lower electrode.

4. The method according to claim 3,

wherein during the execution period of said of drawing ions, a variable parameter of a variable electric element of the matching unit is fixed.