×

Shallow trench textured regions and associated methods

DC
  • US 10,347,682 B2
  • Filed: 06/05/2017
  • Issued: 07/09/2019
  • Est. Priority Date: 06/29/2013
  • Status: Active Grant
First Claim
Patent Images

1. An optoelectronic device having enhanced absorption of electromagnetic radiation, comprising:

  • a semiconductor layer having a light incident side and an opposed side, said semiconductor layer having multiple doped regions forming at least one junction,a textured region comprising a plurality of shallow trench isolation surface features located on the light incident side of the semiconductor layer and configured to interact with incident electromagnetic radiation,a support substrate coupled to said semiconductor layer, anda first bonding layer disposed between the semiconductor layer and the support substrate,wherein said optoelectronic device is a photosensitive imager device capable of detecting visible and infrared electromagnetic radiation.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×