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Fin structures and multi-Vt scheme based on tapered fin and method to form

  • US 10,347,740 B2
  • Filed: 12/02/2016
  • Issued: 07/09/2019
  • Est. Priority Date: 10/24/2014
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a silicon (Si) fin;

    forming a hard mask on a top surface of the Si fin;

    forming an oxide layer on opposite sides of the Si fin;

    implanting a dopant into the Si fin with a vertical channel implant or a punch-through stop (PTS) vertical implant;

    recessing the oxide layer to reveal an active area of the Si fin; and

    modifying sidewalls of the active area of the Si fin by etching the sidewalls with plasma Si etching,wherein the plasma Si etching comprises selectively etching the sidewalls to form multiple levels of verticality of the sidewalls.

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