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Semiconductor device

  • US 10,347,763 B2
  • Filed: 09/07/2017
  • Issued: 07/09/2019
  • Est. Priority Date: 03/03/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • an active fin extending in a first direction on a substrate;

    a device isolation film disposed on the substrate and covering a lower portion of the active fin;

    a gate structure extending in a second direction and covering the active fin and the device isolation film, the second direction being perpendicular with respect to the first direction; and

    a gate spacer disposed on a side wall of the gate structure,wherein the gate structure disposed on the device isolation film has upper and lower portions, a width of the lower portion being narrower than a width of the upper portion;

    wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure;

    wherein an inner side wall of the gate spacer disposed on the device isolation film is disposed to be adjacent to the gate structure, and is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer and totaling an acute angle with respect to a bottom surface of the gate spacer;

    wherein the gate spacer includes a first spacer adjacent to the grate structure, and a second spacer disposed on an outer sidewall of the first spacer; and

    wherein the first spacer has a structure bent at a boundary of the gate structure and the device isolation film, and a width of the second spacer increases toward the device isolation film.

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