Semiconductor device having insulating film including low-density region
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor film;
an oxide insulating film over the oxide semiconductor film; and
a nitride insulating film over and in contact with the oxide insulating film,wherein the oxide insulating film comprises a low-density region whose density is lower than density of the oxide insulating film other than the low-density region, andwherein the nitride insulating film covers the low-density region of the oxide insulating film.
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Abstract
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
154 Citations
17 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film; an oxide insulating film over the oxide semiconductor film; and a nitride insulating film over and in contact with the oxide insulating film, wherein the oxide insulating film comprises a low-density region whose density is lower than density of the oxide insulating film other than the low-density region, and wherein the nitride insulating film covers the low-density region of the oxide insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film; a gate insulating film between the gate electrode and the oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; an oxide insulating film over the oxide semiconductor film, the source electrode and the drain electrode; and a nitride insulating film over and in contact with the oxide insulating film, wherein the oxide insulating film comprises low-density regions in regions covering side end surfaces of the source electrode and the drain electrode, wherein density of each of the low-density regions is lower than density of the oxide insulating film other than the low-density regions, and wherein the nitride insulating film covers the low-density regions of the oxide insulating film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification