Light emitting device and light emitting device package having same
First Claim
1. A light emitting device comprising:
- a first conductivity type semiconductor layer comprising a first conductivity type dopant;
an active layer disposed on the first conductivity type semiconductor layer and comprising a plurality of barrier layers and a plurality of well layers;
an electron blocking structure layer disposed on the active layer;
a second conductivity type semiconductor layer disposed on the electron blocking structure layer and comprising a second conductivity type dopant;
a first electrode electrically connected to the first conductivity type semiconductor layer; and
a second electrode electrically connected to the second conductivity type semiconductor layer,wherein the active layer comprises a first barrier layer adjacent to the electron blocking structure layer and a first well layer adjacent to the first barrier layer,the plurality of barrier layers comprise a first conductivity type dopant,the electron blocking structure layer comprises a plurality of semiconductor layers,wherein the plurality of semiconductor layers include a second conductivity type dopant and AlGaN-based semiconductor,the plurality of semiconductor layers comprise a first semiconductor layer having a first region adjacent to the first barrier layer,the first region of the first semiconductor layer comprises AlGaN-based semiconductor having aluminum composition of 95% or more,a light emitting structure comprising the active layer and the electron blocking structure layer emits different peak wavelengths, andthe electron blocking structure layer is disposed between the active layer and the second conductivity type semiconductor layer,wherein the first barrier layer is disposed between the first semiconductor layer and the first well layer,wherein a thickness of the first barrier layer is smaller than a thickness of the first well layer and is smaller than a thickness of another barrier layer within the plurality of barrier layers,wherein the first well layer has a first band gap,wherein the first barrier layer has a second band gap greater than the first band gap, andwherein band gaps of at least two of the plurality of semiconductor layers within the electron blocking structure layer are greater than the second band gap.
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Accused Products
Abstract
A light emitting device includes a first conductivity type semiconductor layer including a first conductivity type dopant, an active layer disposed on the first conductivity type semiconductor layer and including a plurality of barrier layers and a plurality of well layers, an electron blocking structure layer disposed on the active layer, and a second conductivity type semiconductor layer disposed on the electron blocking structure layer. The active layer includes a first barrier layer adjacent to the electron blocking structure layer and a first well layer adjacent to the first barrier layer. The plurality of barrier layers include a first conductivity type dopant. The electron blocking structure layer includes a plurality of semiconductor layers including a second conductivity type dopant and AlGaN-based semiconductor. The plurality of semiconductor layers include a first semiconductor layer having a first region adjacent to the first barrier layer. The first region of the first semiconductor layer includes AlGaN-based semiconductor having aluminum composition of 95% or more. A light emitting structure including the active layer and the electron blocking structure layer emits different peak wavelengths.
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Citations
20 Claims
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1. A light emitting device comprising:
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a first conductivity type semiconductor layer comprising a first conductivity type dopant; an active layer disposed on the first conductivity type semiconductor layer and comprising a plurality of barrier layers and a plurality of well layers; an electron blocking structure layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron blocking structure layer and comprising a second conductivity type dopant; a first electrode electrically connected to the first conductivity type semiconductor layer; and a second electrode electrically connected to the second conductivity type semiconductor layer, wherein the active layer comprises a first barrier layer adjacent to the electron blocking structure layer and a first well layer adjacent to the first barrier layer, the plurality of barrier layers comprise a first conductivity type dopant, the electron blocking structure layer comprises a plurality of semiconductor layers, wherein the plurality of semiconductor layers include a second conductivity type dopant and AlGaN-based semiconductor, the plurality of semiconductor layers comprise a first semiconductor layer having a first region adjacent to the first barrier layer, the first region of the first semiconductor layer comprises AlGaN-based semiconductor having aluminum composition of 95% or more, a light emitting structure comprising the active layer and the electron blocking structure layer emits different peak wavelengths, and the electron blocking structure layer is disposed between the active layer and the second conductivity type semiconductor layer, wherein the first barrier layer is disposed between the first semiconductor layer and the first well layer, wherein a thickness of the first barrier layer is smaller than a thickness of the first well layer and is smaller than a thickness of another barrier layer within the plurality of barrier layers, wherein the first well layer has a first band gap, wherein the first barrier layer has a second band gap greater than the first band gap, and wherein band gaps of at least two of the plurality of semiconductor layers within the electron blocking structure layer are greater than the second band gap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A light emitting device package comprising:
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a support member; a light emitting device disposed on the support member; and first and second electrode layers electrically connected to the light emitting device, wherein a light emitting structure of the light emitting device emits ultraviolet light having different first and second peak wavelengths, wherein the light emitting device includes; a first conductivity type semiconductor layer comprising a first conductivity type dopant and electrically connected to the first electrode layer; an active layer disposed on the first conductivity type semiconductor layer and comprising a plurality of barrier layers and a plurality of well layers; an electron blocking structure layer disposed on the active layer; and a second conductivity type semiconductor layer disposed on the electron blocking structure layer and electrically connected to the second electrode layer, wherein the active layer comprises a first barrier layer adjacent to the electron blocking structure layer and a first well layer adjacent to the first barrier layer, the plurality of barrier layers comprise a first conductivity type dopant, the electron blocking structure layer comprises a plurality of semiconductor layers, wherein the plurality of semiconductor layers include a second conductivity type dopant and AlGaN-based semiconductor, the plurality of semiconductor layers comprise a first semiconductor layer having a first region adjacent to the first barrier layer, the first region of the first semiconductor layer comprises AlGaN-based semiconductor having aluminum composition of 95% or more, a light emitting structure comprising the active layer and the electron blocking structure layer emits different ultraviolet light, wherein the first barrier layer is disposed between the first semiconductor layer and the first well layer, wherein a thickness of the first barrier layer is smaller than a thickness of the first well layer and smaller than a thickness of another barrier layer within the plurality of barrier layers, wherein the first well layer has a first band gap, wherein the first barrier layer has a second band gap greater than the first band gap, and wherein band gaps of at least two of the plurality of semiconductor layers within the electron blocking structure layer are greater than the second band gap. - View Dependent Claims (19, 20)
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Specification