Method of making carbon nanotube composite layer

• US 10,347,855 B2
• Filed: 04/22/2015
• Issued: 07/09/2019
• Est. Priority Date: 04/24/2014
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Tsinghua University
• Inventors: Jin, Yuan-Hao, Li, Qun-Qing, Fan, Shou-Shan
• Primary Examiner(s): Eslami, Tabassom Tadayyon
• Application Number:
  US14/693,845
• Publication Number:
  US 20150311459A1
• Time in Patent Office: 1,539 Days
• Field of Search: 427122, 427112, 977742
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/484 characterised by the channel regions
• CPC Class Codes: H10K 10/488 the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 71/15 characterised by the solvent used
• CPC Class Codes: H10K 85/221 Carbon nanotubes

Abstract

A method of making carbon nanotube composite layer includes following steps. A first suspension having a number of semiconductor particles is formed. The number of semiconductor particles are deposited on a substrate. A second suspension comprising a number of carbon nanotubes is provided. The number of carbon nanotubes in the second suspension are deposited on the substrate with the number of semiconductor particles.

Claims

1. A method of making carbon nanotube composite layer, the method comprising:

forming a first suspension consisting of a plurality of semiconductor particles and a first solvent, wherein the plurality of semiconductor particles are selected from the group consisting of MoS₂, WS₂, BN, MnO₂, ZnO, MoSe₂, MoTe₂, TaSe₂, NiTe₂, and Bi₂Te₃;

depositing the plurality of semiconductor particles on a substrate, wherein the substrate has the plurality of semiconductor particles thereon;

providing a second suspension consisting of a plurality of carbon nanotubes and a second solvent; and

depositing the plurality of carbon nanotubes on the substrate with the plurality of semiconductor particles thereon to form a mixture after the depositing the plurality of semiconductor particles on the substrate, wherein the plurality of semiconductor particles are uniformly dispersed on the plurality of carbon nanotubes.

2. The method of claim 1, wherein the plurality of carbon nanotubes are pure semiconductor carbon nanotubes.

3. The method of claim 1, wherein a weight ratio between the plurality of carbon nanotubes and the plurality of semiconductor particles of the mixture ranges form 1:

1000 to 1;

3000.

4. The method of claim 1, wherein the first suspension are obtained by dispersing the plurality of semiconductor particles in the first solvent, the plurality of semiconductor particles are deposited on the substrate via physical deposition method, and a deposition time ranges from 5 hours to 24 hours.

5. The method of claim 4, wherein the first suspension is formed by:

providing a semiconductor material, wherein the semiconductor material comprises a structure of one layer or plurality of layers;

mixing and dispersing the semiconductor material in the first solvent by ultrasonic treatment, wherein the plurality of semiconductor particles are dispersed in the first solvent, and each of the plurality of semiconductor particles comprises a single semiconductor molecular layer or a number of semiconductor molecular layers, and the quantity of the plurality of semiconductor layers ranges from 1 to 20 or a number of semiconductor molecular layers, and the quantity of the plurality of semiconductor layers ranges from 1 to 20.

6. The method of claim 5, wherein each of the plurality of semiconductor particles is semiconductor fragment, a size of the semiconductor fragment ranges from 0.1 square micrometers to 5 square micrometers, and a thickness of the semiconductor fragment ranges from 2 nanometers to 20 nanometers.

7. The method of claim 5, wherein a power of the ultrasonic treatment ranges from 300 watts to 600 watts, and a time of the ultrasonic treatment ranges from 5 hours to 24 hours.

8. The method of claim 1, wherein the second suspension are formed by dispersing the plurality of carbon nanotubes in the second solvent, and a mixed ratio between the plurality of carbon nanotubes and the second solvent ranges from 1 mg/200 mL to 1 mg/40 mL.

9. The method of claim 1, wherein the substrate is pretreated to form a polar surface before depositing the plurality of semiconductor particles.

10. The method of claim 9, wherein the surface of the substrate is treated with a mixture of hydrogen peroxide and ammonia.

11. The method of claim 9, wherein a plurality of polar groups is formed on the surface of the substrate.

12. The method of claim 11, wherein a deposition time of the plurality of carbon nanotubes ranges from 20 minutes to 2 hours.

13. The method of claim 1, wherein a area ratio of the plurality of semiconductor particles in the mixture ranges from 30% to 50%.

14. The method of claim 1, wherein the plurality of carbon nanotubes comprise metallic carbon nanotubes, and the plurality of semiconductor particles reduces metallic characteristics of the plurality of carbon nanotubes so that the mixture is semiconducting.

15. The method of claim 14, further comprising adjusting the semiconductivity of the mixture by changing the percentage of the plurality of semiconductor particles in the mixture.

16. A method of making carbon nanotube composite layer, the method comprising:

forming a first suspension comprising a plurality of semiconductor particles, wherein the plurality of semiconductor particles are selected from the group consisting of MoS₂ particles, WS₂ partricles, BN particles, MnO₂ particles, ZnO particles, MoSe₂ particles, MoTe₂ particles, TaSe₂ particles, NiTe₂ particles, and Bi₂Te₃ particles;

depositing the plurality of semiconductor particles on a substrate;

providing a second suspension comprising a plurality of carbon nanotubes; and

depositing the plurality of carbon nanotubes on the substrate with the plurality of semiconductor particles thereon to form a carbon nanotube composite layer after the depositing the plurality of semiconductor particles on the substrate, wherein the plurality of semiconductor particles are uniformly dispersed on the plurality of carbon nanotubes.

17. The method of claim 16, wherein the plurality of carbon nanotubes comprise metallic carbon nanotubes, and the plurality of semiconductor particles reduces metallic characteristics of the plurality of carbon nanotubes so that the carbon nanotube composite layer is semiconducting.

18. The method of claim 17, further comprising adjusting a semiconductivity of the carbon nanotube composite layer by changing the percentage of the plurality of semiconductor particles in the carbon nanotube composite layer.