Semiconductor substrate processing apparatus including uniformity baffles
First Claim
1. A semiconductor substrate processing apparatus for chemical vapor deposition processing semiconductor substrates comprising:
- a chemical isolation chamber in which semiconductor substrates are processed;
a process gas source in fluid communication with the chemical isolation chamber for supplying a process gas into the chemical isolation chamber;
a showerhead module which delivers the process gas through a faceplate having gas passages therethrough to a processing zone of the processing apparatus wherein an individual semiconductor substrate is processed, the showerhead module comprising a gas delivery conduit in fluid communication with a cavity at a lower end thereof wherein the faceplate forms a lower wall of the cavity, a baffle arrangement in the gas delivery conduit and the cavity, and a blocker plate in the cavity disposed below the baffle arrangement wherein the baffle arrangement comprises;
baffles which divide the process gas flowing through the gas delivery conduit into predetermined ratios forming center, inner annular, and outer annular flow streams which flow into the cavity and are recombined above the faceplate, the center flow stream exiting the baffle arrangement into the cavity after being deflected by the blocker plate and directed radially outward above a central portion of the faceplate, the inner annular flow stream exiting the baffle arrangement into the cavity above an inner annular region of the faceplate, and the outer annular flow stream exiting the baffle arrangement into the cavity above an outer annular region of the faceplate; and
a substrate pedestal module adjacent the faceplate of the showerhead module which is configured to support the substrate in the processing zone below the faceplate during processing of the substrate;
wherein the baffles provide different flow rates of the center, inner annular, and outer annular flow streams into the cavity at different radial locations such that a uniform concentration of the process gas is delivered through the faceplate.
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Accused Products
Abstract
A semiconductor substrate processing apparatus for processing semiconductor substrates includes showerhead module delivering process gas through a faceplate having gas passages therethrough from the process gas source to a processing zone of the processing apparatus wherein individual semiconductor substrates are processed. The showerhead module comprises a gas delivery conduit in fluid communication with a cavity at a lower end thereof, a baffle arrangement in the gas delivery conduit and the cavity, and a blocker plate in the cavity disposed below the baffle arrangement. The baffle arrangement comprises baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams. The center flow stream exits the baffle arrangement above a central portion of the faceplate, the inner annular flow stream exits the baffle arrangement above an inner annular region of the faceplate, and the outer annular flow stream exits the baffle arrangement above an outer annular region of the faceplate.
73 Citations
20 Claims
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1. A semiconductor substrate processing apparatus for chemical vapor deposition processing semiconductor substrates comprising:
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a chemical isolation chamber in which semiconductor substrates are processed; a process gas source in fluid communication with the chemical isolation chamber for supplying a process gas into the chemical isolation chamber; a showerhead module which delivers the process gas through a faceplate having gas passages therethrough to a processing zone of the processing apparatus wherein an individual semiconductor substrate is processed, the showerhead module comprising a gas delivery conduit in fluid communication with a cavity at a lower end thereof wherein the faceplate forms a lower wall of the cavity, a baffle arrangement in the gas delivery conduit and the cavity, and a blocker plate in the cavity disposed below the baffle arrangement wherein the baffle arrangement comprises; baffles which divide the process gas flowing through the gas delivery conduit into predetermined ratios forming center, inner annular, and outer annular flow streams which flow into the cavity and are recombined above the faceplate, the center flow stream exiting the baffle arrangement into the cavity after being deflected by the blocker plate and directed radially outward above a central portion of the faceplate, the inner annular flow stream exiting the baffle arrangement into the cavity above an inner annular region of the faceplate, and the outer annular flow stream exiting the baffle arrangement into the cavity above an outer annular region of the faceplate; and a substrate pedestal module adjacent the faceplate of the showerhead module which is configured to support the substrate in the processing zone below the faceplate during processing of the substrate; wherein the baffles provide different flow rates of the center, inner annular, and outer annular flow streams into the cavity at different radial locations such that a uniform concentration of the process gas is delivered through the faceplate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A showerhead module of a semiconductor substrate processing apparatus which delivers process gas through a faceplate having gas passages therethrough from a process gas source to a processing zone of the processing apparatus wherein a semiconductor substrate is processed comprises:
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a gas delivery conduit in fluid communication with a cavity at a lower end thereof wherein the faceplate forms a lower wall of the cavity; a baffle arrangement in the gas delivery conduit and the cavity; and a blocker plate in the cavity disposed below the baffle arrangement; wherein the baffle arrangement comprises; baffles which divide the process gas flowing through the gas delivery conduit into predetermined ratios forming center, inner annular, and outer annular flow streams which flow into the cavity and are recombined above the faceplate, the center flow stream exiting the baffle arrangement into the cavity after being deflected by the blocker plate and directed radially outward above a central portion of the faceplate, the inner annular flow stream exiting the baffle arrangement into the cavity above an inner annular region of the faceplate, and the outer annular flow stream exiting the baffle arrangement into the cavity above an outer annular region of the faceplate; wherein the baffles provide different flow rates of the center, inner annular, and outer annular flow streams into the cavity at different radial locations such that a uniform concentration of the process gas is delivered through the faceplate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification