Carbon dopant gas and co-flow for implant beam and source life performance improvement

• US 10,354,877 B2
• Filed: 03/22/2018
• Issued: 07/16/2019
• Est. Priority Date: 02/14/2012
• Status: Active Grant

• Current Assignee: Entegris Incorporated
• Original Assignee: Entegris Incorporated
• Inventors: Byl, Oleg, Sturm, Edward A., Tang, Ying, Yedave, Sharad N., Sweeney, Joseph D., Sergi, Steven G., Chambers, Barry Lewis
• Primary Examiner(s): Smith, Zandra V
• Assistant Examiner(s): Stevenson, Andre C
• Application Number:
  US15/928,645
• Publication Number:
  US 20180211839A1
• Time in Patent Office: 481 Days
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 33/005 Processes

Abstract

Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Claims

1. A carbon dopant source for ion implantation comprising:

at least one carbon dopant source material;

a co-flow gas; and

at least one additional gas, wherein the at least one co-flow gas or least one additional gas comprises gas selected from the group consisting of;

GeH₄, SiH₄, NH₃, F₂, XeF₂, BF₃, SF₆, GeF₄, SiF₄, NF₃, N₂F₄, HF, WF₆, PF₃, PF₅, and B₂F₄.

2. The carbon dopant source composition claim 1, wherein the at least one carbon dopant source material selected from the group consisting of:

CO;

CO2;

CF4;

CH4;

COF2;

CH20;

C2F4H2;

C2H6;

compounds of the formula CxFwOyHzClvNu, wherein x is greater than or equal to 1, w is greater than or equal to 0, y is greater than or equal to 0, z is greater than or equal to 0, v is greater than or equal to 0, and u is greater than or equal to 0, with the proviso that at least one of w, y, z, v, and u has a non-zero value;

hydrocarbons;

alkanes;

cyclic alkanes;

alkenes;

cyclic alkenes;

polyenes;

cyclic polyenes;

alkynes;

cyclic alkynes;

arenes, and their derivatives;

partially and fully halogenated hydrocarbons;

alcohols of general formula ROH, wherein R is an organo moiety;

halogenated alcohols;

aldehydes;

ethers;

halogenated ethers;

esters;

halogenated esters;

primary amines;

secondary amines;

tertiary amines;

halogenated amines;

N-halogenated amines;

nitro (RN02) and nitroso (RNO) alkyl and halogenated alkyl compounds;

halides, wherein the number of carbon atoms is 1;

halides containing two carbon atoms; and

halides and hydrides containing multiple carbon.

3. The carbon dopant source composition of claim 1, wherein the at least one carbon dopant source material is selected from the group consisting of CO;

CO2;

CF4;

CH4;

COF2;

CH20;

C2F4H2;

C2H6.

4. The carbon dopant source gas composition of claim 1, wherein the at least one carbon dopant source material is CO.

5. The carbon dopant source gas composition of claim 1, wherein the at least one carbon dopant source material is CO2.

6. The carbon dopant source gas composition of claim 1, wherein the at least one carbon dopant source material is CF4.

7. The carbon dopant source gas composition of claim 1, wherein the at least one carbon dopant source material is CH4.

8. The carbon dopant source gas composition of claim 1, wherein the at least one carbon dopant source material is COF2.

9. The carbon dopant source gas composition of claim 1, wherein the at least one carbon dopant source material is CH20.

10. The carbon dopant source gas composition of claim 1, wherein the at least one carbon dopant source material is C2F4H2.

11. The carbon dopant gas source composition of claim 1, wherein the at least one carbon dopant source material is C2H6.

12. The carbon dopant gas source composition of claim 1, wherein the at least one co-flow gas or at least one additional gas comprises NF3.

13. The carbon dopant gas source composition of claim 1, wherein the at least one co- flow gas or the at least one additional gas is present in an amount in the range of 0.001 to 20% (volume) of a mixture of the carbon dopant source and the at least one co-flow gas or the at least one additional gas.

14. The carbon dopant gas source composition of claim 1, wherein the at least one co-flow gas or the at least one additional gas is present in an amount in the range of 0.5 to 15% (volume) of the mixture.

15. The carbon dopant gas source composition of claim 14, wherein the at least one co-flow gas or the at least one additional gas is present in an amount in the range of 0.5 to 10% (volume) of the mixture.