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Non-halogen etching of silicon-containing materials

  • US 10,354,889 B2
  • Filed: 07/17/2017
  • Issued: 07/16/2019
  • Est. Priority Date: 07/17/2017
  • Status: Active Grant
First Claim
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1. An etching method comprising:

  • forming a plasma consisting of an inert precursor within a processing region of a semiconductor processing chamber;

    passivating, with the plasma consisting of the inert precursor, an exposed region of an oxygen-containing material, wherein the oxygen-containing material extends about a feature formed on a semiconductor substrate contained within the processing region to limit exposure of the feature to the plasma;

    forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber;

    directing plasma effluents of the hydrogen-containing precursor towards an exposed silicon-containing material on the semiconductor substrate, wherein the plasma effluents of the hydrogen-containing precursor are directed with a DC bias; and

    anisotropically etching the exposed silicon-containing material with the plasma effluents of the hydrogen-containing precursor, wherein the plasma effluents selectively etch silicon relative to the oxygen-containing material.

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