Systems and methods for microelectronics fabrication and packaging using a magnetic polymer

• US 10,354,950 B2
• Filed: 02/25/2016
• Issued: 07/16/2019
• Est. Priority Date: 02/25/2016
• Status: Active Grant

• Current Assignee: Ferric Inc.
• Original Assignee: Ferric Inc.
• Inventors: Sturcken, Noah, Davies, Ryan
• Primary Examiner(s): Patel, Reema
• Assistant Examiner(s): Christopher, Steven M
• Application Number:
  US15/053,747
• Publication Number:
  US 20170250133A1
• Time in Patent Office: 1,237 Days
• CPC Class Codes: C08K 2003/0843 Cobalt
• CPC Class Codes: C08K 2003/0856 Iron
• CPC Class Codes: C08K 2003/0862 Nickel
• CPC Class Codes: C08K 2003/2265 of iron
• CPC Class Codes: C08K 2003/2289 of cobalt
• CPC Class Codes: C08K 2003/2293 of nickel
• CPC Class Codes: C08K 3/08 Metals
• CPC Class Codes: C08K 3/22 of metals
• CPC Class Codes: H01F 1/26 by macromolecular organic substances
• CPC Class Codes: H01F 1/37 in a bonding agent
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2003/106 Magnetic circuits using combinations of different magnetic materials
• CPC Class Codes: H01F 41/0206 Manufacturing of magnetic cores by mechanical means magnetic cores per se H01F27/24
• CPC Class Codes: H01F 41/04 for manufacturing coils coils for transformer or inductances H01F27/28
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material
• CPC Class Codes: H01L 21/321 After treatment
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13101 : the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16265 : the item being a discrete passive component
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29286 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29355 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29357 : Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/2936 : Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/29386 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/831 : the layer connector being supplied to the parts to be connected in the bonding apparatus
• CPC Class Codes: H01L 2224/8312 : Aligning
• CPC Class Codes: H01L 2224/83855 : Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/83909 : Post-treatment of the layer connector or bonding area
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 23/295 : containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3142 : Sealing arrangements between parts, e.g. adhesion promotors
• CPC Class Codes: H01L 23/5226 : Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/5227 : Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/528 : Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 28/10 : Inductors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01026 : Iron [Fe]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07025 : Polyimide
• CPC Class Codes: H01L 2924/13067 : FinFET, source/drain region shapes fins on the silicon surface
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1425 : Converter
• CPC Class Codes: H01L 2924/19011 : including integrated passive components
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19102 : in a stacked assembly with the semiconductor or solid state device
• CPC Class Codes: H01L 2924/2064 : larger or equal to 1 micron less than 100 microns
• CPC Class Codes: H01L 2924/2075 : larger or equal to 1 micron less than 10 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A magnetic polymer for use in microelectronic fabrication includes a polymer matrix and a plurality of ferromagnetic particles disposed in the polymer matrix. The magnetic polymer can be part of an insulation layer in an inductor formed in one or more backend wiring layers of an integrated device. The magnetic polymer can also be in the form of a magnetic epoxy layer for mounting contacts of the integrated device to a package substrate.

Claims

1. A structure comprising:

a semiconductor integrated circuit or an integrated passive device comprising a multilevel wiring network fabricated on a semiconductor die, wherein said semiconductor die includes a semiconductor; and

an inductor integrated into said multilevel wiring network, wherein said inductor comprises;

a planar magnetic core disposed parallel to a wiring plane;

a conductive winding that turns around in a spiral manner on the outside of said magnetic core, said conductive winding including at least one level from said multilevel wiring network; and

an insulation layer disposed between the magnetic core and the conductive winding, the insulation layer including a magnetically-anisotropic magnetic polymer, the magnetic polymer comprising;

a polymer matrix; and

a plurality of ferromagnetic particles disposed in the polymer matrix,

wherein said magnetic polymer surrounds said magnetic core and said magnetic polymer increases an inductance of said inductor, and

said magnetic polymer has a magnetic anisotropy in which the hard axis of magnetization of the magnetic polymer is aligned parallel to the wiring plane.

2. The structure of claim 1, wherein the inductor forms at least a portion of a switched inductor power converter.

3. The structure of claim 1, wherein the inductor is configured to induce a magnetic flux parallel to the wiring plane.

4. The structure of claim 1, wherein the inductor is configured to induce a magnetic flux orthogonal to the wiring plane.

16. The structure of claim 1, wherein the semiconductor die has a semiconductor substrate as its base.

17. The structure of claim 16, wherein the semiconductor die has a transistor in physical contact with the semiconductor substrate.

18. The structure of claim 16, wherein the semiconductor die has a CMOS device in physical contact with the semiconductor substrate.

19. The structure of claim 1, wherein the ferromagnetic particles have an average size of less than or equal to 10 microns.

5. A structure comprising:

a semiconductor integrated circuit comprising a multilevel wiring network fabricated on a semiconductor die, the semiconductor die disposed parallel to a die plane and including a semiconductor;

an inductor integrated into said multilevel wiring network;

a plurality of contacts in electrical communication with a top level of the multilevel wiring network;

a substrate in electrical communication with the plurality of contacts; and

a magnetically-anisotropic magnetic underfill epoxy extending from the top level of the multilevel wiring network to an opposing surface of the substrate, the magnetic underfill epoxy surrounding the contacts, the magnetic underfill epoxy including ferromagnetic particles and having a magnetic anisotropy in which the hard axis of magnetization is aligned parallel to the die plane,

wherein the contacts, the substrate, and the magnetic underfill epoxy form a flip-chip attachment to the semiconductor die.

6. The structure of claim 5, wherein the inductor forms at least a portion of a switched inductor power converter.

7. The structure of claim 6, wherein the inductor is configured to induce a magnetic flux parallel to the die plane.

8. The structure of claim 6, wherein the inductor is configured to induce a magnetic flux orthogonal to the die plane.

9. The structure of claim 8, wherein the magnetic underfill epoxy has a magnetic anisotropy in which a hard axis of magnetization is parallel to the die plane.

14. The structure of claim 5, wherein said ferromagnetic particles have an average size of less than or equal to 10 microns and the contacts have a size of 30 to 100 microns.

10. A structure comprising:

an integrated passive device comprising a multilevel wiring network fabricated on a semiconductor die, the integrated passive device disposed parallel to a die plane, the semiconductor die including a semiconductor;

an inductor integrated into said multilevel wiring network;

a plurality of contacts in electrical communication with a top level of the multilevel wiring network;

a substrate in electrical communication with the plurality of contacts; and

a magnetically-anisotropic magnetic underfill epoxy extending from the top level of the multilevel wiring network to an opposing surface of the substrate, the magnetic underfill epoxy surrounding the contacts, the magnetic underfill epoxy including ferromagnetic particles and having a magnetic anisotropy in which the hard axis of magnetization is aligned parallel to the die plane,

wherein the contacts, the substrate, and the magnetic underfill epoxy form a flip-chip attachment to the integrated passive device.

11. The structure of claim 10, wherein the inductor forms at least a portion of a switched inductor power converter.

12. The structure of claim 11, wherein the inductor is configured to induce a magnetic flux parallel to the die plane.

13. The structure of claim 11, wherein the inductor is configured to induce a magnetic flux orthogonal to the die plane.

15. The structure of claim 10, wherein said ferromagnetic particles have an average size of less than or equal to 10 microns and the contacts have a size of 30 to 100 microns.