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Semiconductor device including a transistor with a gate dielectric having a variable thickness

  • US 10,355,087 B2
  • Filed: 03/07/2016
  • Issued: 07/16/2019
  • Est. Priority Date: 10/02/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a transistor in a semiconductor substrate having a main surface, the transistor comprising:

  • a source region;

    a drain region laterally spaced apart from the source region;

    a channel region and a drift zone each being laterally disposed between the source and drain regions;

    a gate trench formed in the main surface of the semiconductor substrate;

    an electrically conductive gate electrode formed in the gate trench;

    a gate dielectric formed in the gate trench and electrically insulating the gate electrode from the semiconductor substrate,wherein the gate trench comprises;

    first, second, third and fourth sidewalls and a bottom surface, the first sidewall extending though and facing the source region, the second sidewall extending through and facing the drift zone, and third and fourth sidewalls each extending through and facing the channel region and each extending from the first sidewall to the second sidewall,wherein the second sidewall is laterally spaced apart from the drain region by a portion of the drift zone, andwherein a first thickness of the gate dielectric as measured between the gate electrode and the second sidewall is greater than a second thickness of the gate dielectric as measured between the gate electrode and the first sidewall.

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