Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module

• US 10,355,171 B2
• Filed: 06/08/2018
• Issued: 07/16/2019
• Est. Priority Date: 06/28/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A
• Primary Examiner(s): Coleman, William
• Application Number:
  US16/003,782
• Publication Number:
  US 20180294382A1
• Time in Patent Office: 403 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode including a first conductive type semiconductor layer; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa, a current spreading layer disposed on the mesa and the electrode and including a first portion, a second portion, and a third portion configured to be in ohmic-contact with a first end portion, a second end portion, and a middle portion of the first conductive type semiconductor layer, respectively, an insulation layer disposed on the mesa and the first conductive type semiconductor layer and having a first region having a thickness that varies along a longitudinal direction of the first semiconductor layer.

Claims

1. A light emitting diode, comprising:

a first conductive type semiconductor layer;

a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;

an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa;

a current spreading layer disposed on the mesa and the electrode, the current spreading layer comprising;

a first portion configured to be in ohmic-contact with a first end portion of the first conductive type semiconductor layer;

a second portion configured to be in ohmic-contact with a second end portion of the first conductive type semiconductor layer; and

a third portion configured to be in ohmic-contact with a middle portion of the first conductive type semiconductor layer disposed between the first and second end portions of the first conductive type semiconductor layer; and

an insulation layer disposed on the mesa and the first conductive type semiconductor layer,

wherein the insulation layer comprises a first region having a thickness that varies along a longitudinal direction of the first semiconductor layer.

2. The light emitting diode of claim 1, wherein the insulation layer comprises a first opening exposing the electrode and disposed between the first end portion and the middle portion of the first conductive type semiconductor layer.

3. The light emitting diode of claim 1, wherein between the first and second portions of the current spreading layer, a plurality of openings exposing the electrode is formed in the insulation layer.

4. The light emitting diode of claim 1, wherein the first region of the insulation layer is disposed between the first and third portions of the current spreading layer.

5. The light emitting diode of claim 1, wherein the first region of the insulation layer are formed in plural between the first and second portions of the current spreading layer.

6. The light emitting diode of claim 1, wherein between the first end portion and the middle portion of the first conductive type semiconductor layer, the insulation layer comprises a plurality of openings exposing the electrode.

7. The light emitting diode of claim 1, the first and third portions of the current spreading layer are spaced apart from each other by the mesa.

8. The light emitting diode of claim 1, wherein the insulation layer further comprises a second region having a substantially constant thickness.

9. The light emitting diode of claim 1, wherein the first, second, and third portions of the current spreading layer are formed along sides of the first conductive type semiconductor layer in a plan view.

10. The light emitting diode of claim 2, wherein the insulation layer further comprises a second opening exposing the electrode and disposed between the middle portion and the second end portion of the first conductive type semiconductor layer.

11. A light emitting diode, comprising:

a first conductive type semiconductor layer;

a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;

an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa;

a current spreading layer disposed on the mesa and the electrode; and

an insulation layer disposed on the mesa and the first conductive type semiconductor layer,

wherein;

the first conductive type semiconductor layer comprises a plurality of n-contact regions spaced apart from each other and configured to be in ohmic-contact with the current spreading layer;

a first n-contact region and a second n-contact region of the n-contact regions are disposed at opposing ends of the first conductive type semiconductor layer; and

the insulation layer comprises a first region having a thickness that varies along between the n-contact regions.

12. The light emitting diode of claim 11, wherein the first conductive type semiconductor layer further comprises at least one third n-contact region disposed between the first and second n-contact regions.

13. The light emitting diode of claim 11, wherein at least one first region of the insulation layer is formed between adjacent n-contact regions of the first conductive type semiconductor layer.

14. The light emitting diode of claim 11, wherein the first and second n-contact regions are spaced apart from each other by the mesa.

15. The light emitting diode of claim 11, wherein the insulation layer comprises an opening exposing the electrode and disposed between adjacent n-contact regions.

16. The light emitting diode of claim 11, wherein between the first and second n-contact regions, the insulation layer comprises a plurality of openings exposing the electrode.

17. The light emitting diode of claim 11, wherein the insulation layer further comprises a second region having a substantially constant thickness.

18. The light emitting diode of claim 11, wherein the n-contact regions are formed along sides of the first conductive type semiconductor layer in a plan view.

19. The light emitting diode of claim 12, wherein the n-contact portions have substantially the same length in a plan view.

20. The light emitting diode of claim 12, wherein between the first and third n-contact regions, the insulation layer comprises a plurality of openings exposing the electrode.