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Multi-mode multi-band self-realigning power amplifier

  • US 10,355,722 B2
  • Filed: 11/27/2015
  • Issued: 07/16/2019
  • Est. Priority Date: 07/24/2011
  • Status: Active Grant
First Claim
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1. A transmit (Tx) system configured to operate for a plurality of modes and for a plurality of frequency bands, comprising:

  • a plurality of input ports for inputting signals;

    a plurality of Tx modules coupled to the plurality of input ports, respectively, each of the plurality of Tx modules comprising a PA system and a filter system; and

    a controller coupled to each of the PA systems and filter systems of the plurality of Tx modules;

    wherein the controller is configured to receive information associated with a change in condition and to control each PA system and a filter system of each of the plurality of Tx modules based at least in part on a frequency band selected from the plurality of frequency bands, a mode selected from the plurality of modes and information associated with the change in condition during a time interval, wherein the controller controls each of the plurality of Tx modules variably with time as the information varies during each time interval;

    wherein each PA system comprises a plurality of amplifying modules and a plurality of matching modules, the plurality of amplifying modules and the plurality of matching modules being alternatively coupled in series, each of the plurality of amplifying modules comprising a plurality of banks, each of the plurality of banks comprising one or more transistors, wherein the controller is configured to control each PA system by controlling a signal path through the plurality of amplifying modules and the plurality of matching modules by selecting one bank of the plurality of banks in each of the amplifying modules as part of the signal path;

    wherein a first bank of the plurality of banks of one of the plurality of amplifying modules comprises a first number of transistors and a second bank of the plurality of banks of the one of the plurality of amplifying modules comprises a second number of transistors, the second number of transistors being different from the first number of transistors.

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