MEMS device and fabrication method thereof

• US 10,357,768 B2
• Filed: 08/28/2016
• Issued: 07/23/2019
• Est. Priority Date: 08/28/2015
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International Corporation
• Original Assignee: Semiconductor Manufacturing International (Shanghai) Corporation (Semiconductor Manufacturing International Corporation)
• Inventors: Zheng, Chao
• Primary Examiner(s): Landau, Matthew C
• Assistant Examiner(s): Yemelyanov, Dmitriy
• Application Number:
  US15/249,439
• Publication Number:
  US 20170057816A1
• Time in Patent Office: 1,059 Days
• Field of Search: 257466
• CPC Class Codes: B01L 3/5027 by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip B01L3/5023 takes precedence; micromixers B01F33/30; microreactors for synthesis B01J19/0093; microcapillary devices in general B81B1/00
• CPC Class Codes: B81B 2201/0292 Sensors not provided for in B81B2201/0207 - B81B2201/0285
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81B 3/0083 Optical properties
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/08 in which radiation controls flow of current through the device, e.g. photoresistors

Abstract

A method for fabricating an MEMS device includes providing a first substrate with a central region and a peripheral region, and forming a plurality of first openings in the peripheral region and a plurality of third openings in the central region by etching the first substrate from a front side. The depth of the first openings is larger than the depth of the third openings. The method further includes forming a photosensitive layer on the surfaces of the first openings and the third openings, bonding a second substrate to the front side of the first substrate, and forming a trench by etching the first substrate from a back side using a patterned mask layer as an etch mask. The trench has a concave bottom surface and exposes a portion of the photosensitive layer formed on the bottom surfaces of the first openings and the third openings.

Claims

1. A method for fabricating a micro-electro mechanical system (MEMS) device, comprising:

providing a first substrate with an open region, wherein the first substrate includes a front side and, opposite to the front side, a back side, and the open region includes a central region and a peripheral region adjacent to a sidewall of the open region surrounding the central region;

forming a plurality of first openings in the first substrate in the peripheral region and a plurality of third openings in the first substrate in the central region by etching the first substrate in the open region from the front side to the back side, wherein a depth of the first openings in the first substrate is larger than a depth of the third openings in the first substrate, while the depth of the first openings and the depth of the third openings are both smaller than a thickness of the first substrate;

forming a photosensitive layer, the photosensitive layer including;

a bottom portion of the photosensitive layer formed on bottom surfaces of each of the first openings and also on bottom surfaces of each of the third openings; and

a sidewall portion of the photosensitive layer formed on sidewall surfaces of each of the first openings and also on sidewall surfaces of each of the third openings;

providing a second substrate;

bonding the second substrate to the front side of the first substrate;

forming a patterned mask layer on the back side of the first substrate exposing a portion of the back side surface of the first substrate corresponding to the open region; and

forming a trench in the first substrate by a dry etching process using the patterned mask layer as an etch mask and along an etching direction from the back side of the first substrate to the front side of the first substrate, wherein the trench has a concave bottom surface towards the front side of the first substrate, and all of the bottom portion of the photosensitive layer is above the concave bottom surface of the trench and at least a portion of each of the sidewall portion of the photosensitive layer is above the concave bottom surface of the trench.

2. The method for fabricating the MEMS device according to claim 1, wherein, along a direction parallel to the front side of the first substrate, a dimension of the first openings is larger than or equal to a dimension of the third openings.

3. The method for fabricating the MEMS device according to claim 1, wherein:

the open region further includes a transitional region;

the central region is surrounded by the transitional region and the transitional region is surrounded by the peripheral region; and

a plurality of second openings is formed in the first substrate in the transitional region.

4. The method for fabricating the MEMS device according to claim 3, wherein a depth of the second openings in the first substrate is larger than or equal to the depth of the third openings in the first substrate.

5. The method for fabricating the MEMS device according to claim 4, wherein:

the depth of the second openings in the first substrate is larger than the depth of the third openings in the first substrate; and

the depths of different second openings in the first substrate in the transitional region have a same value or become smaller and smaller along a direction from the peripheral region to the central region.

6. The method for fabricating the MEMS device according to claim 3, wherein, along a direction parallel to the front side of the first substrate, a dimension of the first openings is larger than a dimension of the third openings.

7. The method for fabricating the MEMS device according to claim 6, wherein, along a direction parallel to the front side of the first substrate, a dimension of the second openings is larger than or equal to the dimension of the third openings.

8. The method for fabricating the MEMS device according to claim 7, wherein, when the dimension of the second openings along the direction parallel to the front side of the first substrate is larger than the dimension of the third openings along the direction parallel to the front side of the first substrate, the dimensions of different second openings have a same value or become smaller and smaller along a direction from the peripheral region to the central region.

9. The method for fabricating the MEMS device according to claim 6, wherein:

the dimension of the first openings along the front side of the first substrate is in a range of 50 μ

m-80 μ

m; and

the dimension of the third openings along the front side of the first substrate is in a range of 30 μ

m-50 μ

m.

10. The method for fabricating the MEMS device according to claim 6, wherein the fabrication process for the first openings, the second openings, and the third openings further includes:

forming a patterned layer with a plurality of notches on the front side of the first substrate, wherein along the direction parallel to the front side of the first substrate, a dimension of the notches formed in the peripheral region is larger than a dimension of the notches formed in the central region;

forming the plurality of first openings, the plurality of second openings, and the plurality of third openings in the first substrate by etching a portion of the first substrate along the plurality of notches using the patterned layer as an etch mask; and

removing the patterned layer.

11. The method for fabricating the MEMS device according to claim 10, wherein along the direction parallel to the front side of the first substrate, a dimension of the notches formed in the transitional region is larger than or equal to the dimension of the notches formed in the central region.

12. The method for fabricating the MEMS device according to claim 1, wherein the photosensitive layer is made of SiO_x.

13. The method for fabricating the MEMS device according to claim 1, wherein the second substrate is bonded to the front side of the first substrate by a vacuum bonding process.

14. The method for fabricating the MEMS device according to claim 10, wherein the plurality of notches have a circular shape in a top view.

15. The method for fabricating the MEMS device according to claim 10, wherein the patterned layer is removed by an ashing process or a wet etching strip-removal process.

16. The method for fabricating the MEMS device according to claim 1, wherein a thickness of the photosensitive layer is in a range of 10 Å

to 100 Å

.

17. The method for fabricating the MEMS device according to claim 1, wherein a central axis of the trench overlaps with a central axis of the central region.

18. The method for fabricating the MEMS device according to claim 1, wherein an opening of the plurality of third openings, closest to the sidewall of the open region, has a bottom above the concave bottom surface of the trench.