Integrated circuits having shielded MEMS devices and methods for fabricating shielded MEMS devices

• US 10,358,340 B2
• Filed: 04/28/2016
• Issued: 07/23/2019
• Est. Priority Date: 04/28/2016
• Status: Active Grant

• Current Assignee: Vanguard International Semiconductor Singapore Pte. Ltd. (Vanguard International Semiconductor Corporation)
• Original Assignee: Globalfoundries Singapore Pte Limited (GlobalFoundries, Inc.)
• Inventors: Campanella-Pineda, Humberto, Kumar, Rakesh, Sbiaa, Zouhair, Ranganathan, Nagarajan, Yelehanka, Ramachandramurthy Pradeep
• Primary Examiner(s): Picardat, Kevin M
• Application Number:
  US15/140,906
• Publication Number:
  US 20170313577A1
• Time in Patent Office: 1,181 Days
• Field of Search: 257 41, 257659, 438 50, 438 51, 438 53
• CPC Class Codes: B81B 7/0022 Protection against electrostatic discharge electrostatic discharge protection for electronic semiconductor circuits H01L27/0248; circuit arrangements for protecting electronic switching circuits used for pulse technique against overcurrent or overvoltage H03K17/08
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

Abstract

Integrated circuits having shielded micro-electromechanical system (MEMS) devices and method for fabricating shielded MEMS devices are provided. In an example, an integrated circuit having a shielded MEMS device includes a substrate, a ground plane including conductive material over the substrate, and a dielectric layer over the ground plane. The integrated circuit further includes a MEMS device over the ground plane. Also, the integrated circuit includes a conductive pillar through the dielectric layer and in contact with the ground plane. The integrated circuit includes a metallic thin film over the MEMS device and in contact with the conductive pillar, wherein the metallic thin film, the conductive pillar and the ground plane form an electromagnetic shielding structure surrounding the MEMS device. Further, the integrated circuit includes an acoustic shielding structure over the substrate and adjacent the electromagnetic shielding structure.

Claims

1. An integrated circuit having a shielded MEMS device comprising:

a substrate;

a ground plane including conductive material over the substrate;

a dielectric layer over the ground plane;

a MEMS device over the ground plane;

a first conductive pillar through the dielectric layer and in contact with the ground plane;

a second conductive pillar through the dielectric layer and in contact with the ground plane, wherein the MEMS device is located between the first conducive pillar and the second conductive pillar;

a metallic film over the MEMS device and in contact with the first and second conductive pillars, wherein the metallic film, first and second conductive pillars and the ground plane form an electromagnetic shielding structure surrounding the MEMS device; and

an acoustic shielding structure over the substrate and adjacent the electromagnetic shielding structure.

2. The integrated circuit of claim 1 wherein:

the MEMS device has a footprint,

each conductive pillar is outside of the footprint of the MEMS device;

the integrated circuit further comprises a MEMS device layer over the substrate and including a first portion forming part of the MEMS device and a second portion outside of the footprint of the MEMS device; and

a portion of the metallic film extends through the MEMS device layer outside the footprint.

3. The integrated circuit of claim 1 wherein a lower cavity separates the MEMS device from the ground plane and an upper cavity separates the MEMS device from the metallic film.

4. The integrated circuit of claim 1 further comprising a dielectric shielding layer overlying MEMS device, wherein an upper cavity separates the MEMS device from the dielectric shielding layer, wherein the metallic film is located on the dielectric shielding layer.

5. The integrated circuit of claim 4 further comprising a sealing layer on the metallic film.

6. The integrated circuit of claim 1 wherein the MEMS device has a footprint, and wherein the acoustic shielding structure is formed from a dielectric material patterned to form a periodic structure overlying the dielectric layer outside the footprint.

7. The integrated circuit of claim 6 wherein the first and second conductive pillars are outside of the footprint of the MEMS device, and wherein the integrated circuit further comprises a seal ring formed by:

a seal ring conductive pillar through the dielectric layer and in electrical connection with the ground plane; and

a conductive material overlying the dielectric layer, adjacent the electromagnetic shielding structure, and in electrical connection with the seal ring conductive pillar.

8. The integrated circuit of claim 7 wherein:

the seal ring conductive pillar comprises an array of seal ring conductive pillars through the dielectric layer and in electrical connection with the ground plane; and

the conductive material overlying the dielectric layer comprises an array of conductive isolation pillars formed in the periodic structure and in electrical connection with the array of seal ring conductive pillars.

9. An integrated circuit having a shielded MEMS device comprising:

a substrate;

a ground plane including conductive material over the substrate;

a dielectric layer over the ground plane;

a MEMS device over the ground plane and having a footprint; and

an acoustic shielding structure formed from a dielectric material patterned to form a periodic structure overlying the dielectric layer outside the footprint.

10. The integrated circuit of claim 9 further comprising an electromagnetic shielding structure surrounding the MEMS device and located between the MEMS device and the acoustic shielding structure.

11. The integrated circuit of claim 9 wherein the dielectric material is formed with vias, and wherein the integrated circuit further comprises:

a conductive pillar located outside the footprint, passing through the dielectric layer, and in electrical connection with the ground plane; and

a conductive material formed in the vias overlying the dielectric layer, outside the footprint, and in electrical connection with the conductive pillar, and wherein the conductive material adjusts acoustic properties of the acoustic shielding structure.

12. A method for fabricating a shielded MEMS device, the method comprising:

providing a substrate;

forming a ground plane including conductive material over the substrate;

depositing a MEMS device layer over the substrate and forming a MEMS device over the ground plane;

forming a first conductive pillar in contact with the ground plane;

depositing a metallic film over the MEMS device and in contact with the first conductive pillar, wherein the metallic film, the conductive pillar and the ground plane form an electromagnetic shielding structure surrounding the MEMS device; and

forming a seal ring by;

forming a seal ring conductive pillar in electrical connection with the ground plane; and

forming a conductive material in the MEMS device layer, in electrical connection with the seal ring conductive pillar, and adjacent the electromagnetic shielding structure.

13. The method of claim 12 wherein forming the MEMS device over the ground plane comprises depositing a MEMS device layer over the substrate.

14. The method of claim 13 wherein:

the MEMS device has a footprint;

the first conductive pillar is outside of the footprint of the MEMS device;

forming the MEMS device over the ground plane comprises patterning the MEMS device layer within the footprint; and

depositing the metallic film over the MEMS device and in contact with the first conductive pillar comprises forming a portion of the metallic film that extends through the MEMS device layer outside the footprint.

15. The method of claim 12 further comprising forming a CMOS device over the substrate, wherein forming the ground plane including conductive material over the substrate comprises depositing the conductive material over and in selective electrical contact with the CMOS device.

16. The method of claim 12 wherein forming a MEMS device over the ground plane comprises:

depositing a dielectric layer over the ground plane; and

etching the dielectric layer to form a lower cavity between the MEMS device and the ground plane.

17. The method of claim 12 further comprising:

depositing a dielectric shielding layer overlying MEMS device, wherein an upper cavity isolates the MEMS device from the dielectric shielding layer, wherein depositing the metallic film over the MEMS device and in contact with the first conductive pillar comprises depositing the metallic film over the dielectric shielding layer; and

depositing a sealing layer over the metallic film.

18. The method of claim 12 further comprising forming an acoustic shielding structure over the substrate and adjacent the electromagnetic shielding structure.

19. The method of claim 12 further comprising depositing a dielectric layer over the ground plane, wherein forming the first conductive pillar in contact with the ground plane comprises forming the first conductive pillar through the dielectric layer, and wherein forming the seal ring conductive pillar in electrical connection with the ground plane comprises forming the seal ring conductive pillar through the dielectric layer.

20. The method of claim 12 wherein:

forming the seal ring conductive pillar comprises forming an array of seal ring conductive pillars in electrical connection with the ground plane; and

forming the conductive material in the MEMS device layer comprises forming an array of conductive isolation pillars in contact with the array of seal ring conductive pillars.