Light-emitting apparatus

• US 10,359,155 B2
• Filed: 07/10/2016
• Issued: 07/23/2019
• Est. Priority Date: 08/20/2015
• Status: Active Grant

• Current Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Inventors: Hirasawa, Taku, Inada, Yasuhisa, Hashiya, Akira, Nagao, Nobuaki, Tsujimoto, Akira
• Primary Examiner(s): Carter, William J
• Application Number:
  US15/206,273
• Publication Number:
  US 20170051885A1
• Time in Patent Office: 1,108 Days
• Field of Search: 362583, 362558
• CPC Class Codes: F21K 9/64 using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
• CPC Class Codes: F21V 13/14 the elements being filters or photoluminescent elements, reflectors and refractors
• CPC Class Codes: F21V 5/04 of lens shape
• CPC Class Codes: F21V 5/10 comprising photoluminescent material
• CPC Class Codes: F21V 7/30 the coatings comprising photoluminescent substances
• CPC Class Codes: F21V 9/40 with provision for controlling spectral properties, e.g. colour, or intensity
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: F21Y 2115/30 Semiconductor lasers
• CPC Class Codes: H01S 5/00 Semiconductor lasers superluminescent diodes H01L33/00

Abstract

A light-emitting apparatus includes an excitation light source that emits first light; a light-emitting device on an optical path of the first light, the light-emitting device emitting second light having a wavelength in air; and a first converging lens on an optical path of the second light. The light-emitting device comprises: a photoluminescent layer that emits the second light by being excited by the first light; and a light-transmissive layer on the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a surface structure comprising projections or recesses arranged perpendicular to a thickness direction of the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction, the second light emitted from the light emitting surface. The surface structure limits the directional angle of the second light emittied from the light emitting surface.

Claims

1. A light-emitting apparatus comprising:

an excitation light source that emits first light;

a light-emitting device on an optical path of the first light, the light-emitting device emitting second light having a wavelength λ

_a in air; and

a first converging lens on an optical path of the second light, wherein;

the light-emitting device comprises;

a photoluminescent layer that emits the second light by being excited by the first light; and

a light-transmissive layer on the photoluminescent layer,

at least one of the photoluminescent layer and the light-transmissive layer has a surface structure comprising projections or recesses arranged perpendicular to a thickness direction of the photo luminescent layer,

the surface structure is entirely made of a light-transmissive dielectric material,

at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction, the second light emitted from the light emitting surface,

the surface structure limits the directional angle of the second light emitted from the light emitting surface,

the photoluminescent layer comprises a dielectric layer, and

the light-transmissive dielectric material is continuously formed from the dielectric layer by a same material as the dielectric layer so that the surface structure is formed as a part of the photoluminescent layer.

2. The light-emitting apparatus according to claim 1, wherein the surface structure limits the directional angle of the second light emitted from the light emitting surface to less than 15 degrees.

3. The light-emitting apparatus according to claim 1, wherein the surface structure satisfies the following relationship:

λ

_a/n_wav-a<

D_int<

λ

_a

where D_int is a center-to-center distance between adjacent two of the projections or the recesses, and n_wav-a is a refractive index of the photoluminescent layer for the second light.

4. The light-emitting apparatus according to claim 1, wherein the surface structure has at least one periodic structure that satisfies the following relationship:

λ

_a/n_wav-a<

p_a<

k_a

where p_a is a period of the at least one periodic structure.

5. The light-emitting apparatus according to claim 1, further comprising a collimating lens between the light-emitting device and the first converging lens.

6. The light-emitting apparatus according to claim 1, further comprising a joint for an optical fiber, at an incident position of light passing through the first converging lens.

7. The light-emitting apparatus according to claim 1, further comprising a second converging lens between the excitation light source and the light-emitting device.

8. The light-emitting apparatus according to claim 7, further comprising a collimating lens between the excitation light source and the second converging lens.

9. The light-emitting apparatus according to claim 1, further comprising a collimating lens between the excitation light source and the light-emitting device.

10. The light-emitting apparatus according to claim 1, wherein the photoluminescent layer is in contact with the light-transmissive layer.

11. The light-emitting apparatus according to claim 1, wherein a thickness of the photoluminescent layer, the refractive index of the photoluminescent layer, and the center-to-center distance between adjacent two of the projections or the recesses are set to limit the directional angle of the second light emitted from the light emitting surface.

12. The light-emitting apparatus according to claim 1, wherein the light-transmissive dielectric material is one of magnesium fluoride (MgF₂), lithium fluoride (LiF), calcium fluoride (CaF₂), resins, magnesium oxide (MgO), indium tin oxide (ITO), silicon nitride (SiN), tantalum pentoxide (Ta₂O₅), zirconia (ZrO₂), zinc selenide (ZnSe), and zinc sulfide (ZnS).