Memory device including multiple select gates and different bias conditions
First Claim
Patent Images
1. An apparatus comprising:
- a pillar extending between a conductive material region and a source, the pillar including a first segment, a second segment, and a third segment;
a first select gate located along the first segment of the pillar and including a conductive material having sidewall at a first distance from the first segment of the pillar;
a second select gate located along the second segment of the pillar and including a conductive material having a sidewall at a second distance from the second segment of the pillar; and
a memory cell string and a plurality of conductive materials located along the third segment of the pillar, each conductive material of the plurality of conductive materials including sidewall at a third distance from the third segment of the pillar, the third distance being different from each of the first and second distances.
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Abstract
Some embodiments include apparatuses and methods using first and second select gates coupled in series between a conductive line and a first memory cell string of a memory device, and third and fourth select gates coupled in series between the conductive line and a second memory cell string of the memory device. The memory device can include first, second, third, and fourth select lines to provide first, second, third, and fourth voltages, respectively, to the first, second, third, and fourth select gates, respectively, during an operation of the memory device. The first and second voltages can have a same value. The third and fourth voltages can have different values.
65 Citations
20 Claims
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1. An apparatus comprising:
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a pillar extending between a conductive material region and a source, the pillar including a first segment, a second segment, and a third segment; a first select gate located along the first segment of the pillar and including a conductive material having sidewall at a first distance from the first segment of the pillar; a second select gate located along the second segment of the pillar and including a conductive material having a sidewall at a second distance from the second segment of the pillar; and a memory cell string and a plurality of conductive materials located along the third segment of the pillar, each conductive material of the plurality of conductive materials including sidewall at a third distance from the third segment of the pillar, the third distance being different from each of the first and second distances. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An apparatus comprising:
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a pillar extending between a first conductive material region and a second conductive material region, the pillar including a first segment, a second segment, and a third segment; a first select gate located along the first segment of the pillar, the first select gate including a conductive material having a first thickness; a second select gate located along the second segment of the pillar; the second select gate including a conductive material having a second thickness, the first thickness being different from the second thickness; and a memory cell string and control lines located along the third segment of the pillar. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. An apparatus comprising:
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a pillar extending between a first conductive material region and a second conductive material region; a first select gate located along a first segment of the pillar, the first select gate including a first conductive portion and a second conductive portion contacting the first conductive portion, the first and second conductive portions of the first select gate having different resistances; a second select gate located along a second segment of the pillar;
the second select gate including a first conductive portion and a second conductive portion contacting the first conductive portion of the second select gate, the first and second conductive portions of the second select gate having different resistances; anda memory cell string and control lines located along a third segment of the pillar. - View Dependent Claims (18, 19, 20)
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Specification