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Methods and structures for forming uniform fins when using hardmask patterns

  • US 10,361,125 B2
  • Filed: 12/19/2017
  • Issued: 07/23/2019
  • Est. Priority Date: 12/19/2017
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a hardmask layer on a substrate;

    patterning the hardmask layer to form a plurality of patterned hardmask portions on the substrate;

    depositing a dummy hardmask layer on the substrate;

    patterning the dummy hardmask layer to form a plurality of patterned dummy hardmask portions on the substrate, wherein each of the plurality of patterned dummy hardmask portions is positioned adjacent respective outermost patterned hardmask portions of the plurality of patterned hardmask portions;

    transferring a pattern of the plurality of patterned hardmask portions and the plurality of patterned dummy hardmask portions to the substrate to form a plurality of fins and a plurality of dummy fins from the substrate; and

    forming a spacer layer on the dummy hardmask layer.

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