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Semiconductor devices and methods of fabricating the same

  • US 10,361,194 B2
  • Filed: 10/27/2016
  • Issued: 07/23/2019
  • Est. Priority Date: 10/30/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a fin-shaped active region protruding from a substrate;

    a gate insulating layer on the substrate; and

    a gate electrode structure that extends along three sides of the fin-shaped active region, on the gate insulating layer,wherein the gate electrode structure comprises a lower conductive layer and an upper conductive layer sequentially stacked on the gate insulating layer and a silicon oxide layer between the lower conductive layer and the upper conductive layer, and the lower conductive layer comprises a barrier metal layer,wherein the silicon oxide layer extends along a sidewall and a bottom surface of the upper conductive layer, andwherein the three sides of the fin-shaped active region comprise top, right, and left sides of the fin-shaped active region.

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