Semiconductor device and semiconductor device production system
First Claim
1. A display device comprising:
- a surface comprising a first projection and a first depression;
a polycrystalline semiconductor film over the surface;
a gate insulating film over the polycrystalline semiconductor film;
a gate electrode over the gate insulating film;
an insulating film over the gate electrode; and
an electrode electrically connected to the polycrystalline semiconductor film,wherein a surface of the polycrystalline semiconductor film comprises a second projection and a second depression, andwherein the gate electrode and the first projection of the surface overlap each other.
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Abstract
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
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Citations
16 Claims
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1. A display device comprising:
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a surface comprising a first projection and a first depression; a polycrystalline semiconductor film over the surface; a gate insulating film over the polycrystalline semiconductor film; a gate electrode over the gate insulating film; an insulating film over the gate electrode; and an electrode electrically connected to the polycrystalline semiconductor film, wherein a surface of the polycrystalline semiconductor film comprises a second projection and a second depression, and wherein the gate electrode and the first projection of the surface overlap each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A display device comprising:
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a surface comprising a first projection and a first depression; a polycrystalline semiconductor film over the surface; a gate insulating film over the polycrystalline semiconductor film; a gate electrode over the gate insulating film; an insulating film over the gate electrode; and an electrode electrically connected to the polycrystalline semiconductor film, wherein a surface of the polycrystalline semiconductor film comprises a second projection and a second depression, wherein the gate electrode and the first projection of the surface overlap each other, wherein the polycrystalline semiconductor film comprises a first region and a second region, wherein the first region and the electrode overlap each other, wherein the second region and the gate electrode overlap each other, and wherein a height of a surface of the second region is higher than a height of a surface of the first region. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification